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NVH4L020N120SC1

MOSFET SIC MOS TO247-4L 20MOHM 1200V

Inventory:8,629

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Overview of NVH4L020N120SC1

Meet the NVH4L020N120SC1, a groundbreaking EliteSiC MOSFET that represents a transformative technology offering unmatched switching performance and heightened reliability, surpassing conventional Silicon options. This state-of-the-art component features low ON resistance and a compact chip size, ensuring low capacitance and gate charge, ultimately delivering a host of system benefits. These advantages include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and a smaller system footprint. By leveraging these advanced capabilities, the NVH4L020N120SC1 is set to redefine the power electronics landscape with its unrivaled features and unmatched performance

Key Features

  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
  • Qualified for Automotive According to AEC−Q101
  • High Speed Switching and Low Capacitance
  • Devices are Pb−Free and are RoHS Compliant

Application

  • On Board Charger (OBC)
  • DC DC Inverter

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 102 A
Rds On - Drain-Source Resistance 28 mOhms Vgs - Gate-Source Voltage - 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V Qg - Gate Charge 220 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 510 W Channel Mode Enhancement
Brand onsemi Product Type MOSFET
Factory Pack Quantity 30 Subcategory MOSFETs

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    Parts Quality Guarantee: 365 days

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