NSVJ3910SB3T1G
JFET with -25V rating, ideal for low power applications
Inventory:9,447
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Part Number : NSVJ3910SB3T1G
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Package/Case : TO-236-3
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Brand : onsemi
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Components Classification : JFETs
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Datesheet : NSVJ3910SB3T1G DataSheet (PDF)
Overview of NSVJ3910SB3T1G
The NSVJ3910SB3T1G is a JFET transistor designed for automotive applications that require high reliability and performance. With a breakdown voltage of -25V, a gate-source cutoff voltage of -1.8V, and an operating temperature max of 150°C, this transistor is suitable for a wide range of automotive electronic systems
Key Features
- SMT package ensures compact design
- Reliable performance for radar and comms apps
- Efficient power amplification for 2-6 GHz range
- High gain and low distortion for clear signals
- Omnidirectional radiation for effective beamforming
- Rugged design for harsh environmental conditions
Application
- Information transmission
- Wireless connectivity
- Smart technology solutions
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | 25 V | Drain to Source Voltage (Vdss) | 25 V |
Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 5 V | Current Drain (Id) - Max | 50 mA |
Voltage - Cutoff (VGS off) @ Id | 600 mV @ 100 µA | Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 5V |
Power - Max | 400 mW | Operating Temperature | -55°C ~ 150°C (TJ) |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-CPH | Base Product Number | NSVJ3910 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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