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BSC070N10NS3GATMA1

Transistor MOSFET N-channel for automotive applications with a power rating of 100V and 90A

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Overview of BSC070N10NS3GATMA1

The BSC070N10NS3GATMA1 is an N-channel power MOSFET designed for high-performance switching applications. It features a low ON-state resistance and high current capability, making it suitable for power management tasks in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VDD: Drain Supply Voltage
  • VSS: Source Supply Voltage
  • VGS: Gate-Source Voltage
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC070N10NS3GATMA1 MOSFET for better understanding.

Key Features

  • Low ON-State Resistance: The BSC070N10NS3GATMA1 offers low RDS(on) for efficient power handling.
  • High Current Capability: This MOSFET can handle high currents, making it suitable for power applications.
  • Fast Switching Speed: With rapid switching characteristics, it enables quick transitions in the circuit.
  • Enhanced Power Management: Provides effective power control and management in electronic systems.
  • Temperature Stability: Maintains performance over a wide temperature range, ensuring reliability.

Note: For detailed technical specifications, please refer to the BSC070N10NS3GATMA1 datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power regulation.
  • Motor Control: Suitable for motor control applications where high current handling is required.
  • Inverters: Used in inverter circuits for converting DC power to AC power with high efficiency.

Functionality

The BSC070N10NS3GATMA1 MOSFET is designed to control the flow of power in electronic circuits with its low resistance and high current capabilities.It provides reliable switching and power management in various applications.

Usage Guide

  • Gate Control: Apply the appropriate gate-source voltage to control the switching behavior of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking for the MOSFET to prevent overheating during operation.
  • Current Handling: Stay within the specified current limits to avoid damaging the MOSFET.

Frequently Asked Questions

Q: Is the BSC070N10NS3GATMA1 suitable for high-frequency switching applications?
A: Yes, the BSC070N10NS3GATMA1 offers fast switching speeds and can be used in high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the BSC070N10NS3GATMA1:

  • IRF3205: A power MOSFET with comparable performance characteristics suitable for power applications.
  • STP55NF06L: This N-channel MOSFET offers high current handling and low ON-state resistance for power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS; RoHS compliant, non dry
packageNameMarketing SuperSO8 5x6 msl 1
halogenFree yes customerInfo STANDARD
fgr P31 productClassification COM
productStatusInfo active hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000778082
fourBlockPackageName PG-TDSON-8-1 rohsCompliant yes
opn BSC070N10NS3GATMA1 completelyPbFree no
sapMatnrSali SP000778082

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