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BSC040N08NS5ATMA1

-Pin TDSON EP, Tape and Reel packaging

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Overview of BSC040N08NS5ATMA1

Infineon's BSC040N08NS5ATMA1, part of the OptiMOS 5 80V MOSFET series, is engineered to provide optimal performance in synchronous rectification for telecom and server power supplies. With a focus on reducing output capacitance and R DS(on), these MOSFETs are tailored for high switching frequency applications, resulting in minimized switching and conduction losses. The benefits of utilizing these MOSFETs include enhanced system efficiency, reduced voltage overshoot, and decreased need for paralleling. Moreover, their versatility allows for integration in various industrial applications, such as solar, low voltage drives, and adapters. In essence, the BSC040N08NS5ATMA1 offers a combination of features and benefits that make it an attractive choice for achieving superior performance and efficiency in power supply designs

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS 5 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 67µA Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 40 V
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-7
Package / Case TDSON-8 Base Product Number BSC040
Manufacturer Infineon Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.2 V Qg - Gate Charge 43 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Fall Time 6 ns
Forward Transconductance - Min 45 S Height 1.27 mm
Length 5.9 mm Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 14 ns
Width 5.15 mm Part # Aliases BSC040N08NS5 SP001132452
Unit Weight 0.003683 oz

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