MMDT5551-7-F
Transistor featuring two NPN junctions, suitable for voltages up to 160V and currents up to 0.2A in an SOT363-6 package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.046 | $0.46 |
100 | $0.037 | $3.70 |
300 | $0.032 | $9.60 |
3000 | $0.029 | $87.00 |
6000 | $0.026 | $156.00 |
9000 | $0.025 | $225.00 |
Inventory:7,478
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : MMDT5551-7-F
-
Package/Case : 6-TSSOP
-
Brand : Diodes Incorporated
-
Components Classification : Bipolar Transistor Arrays
-
Datesheet : MMDT5551-7-F DataSheet (PDF)
-
Series : MMDT55
Overview of MMDT5551-7-F
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SOT-363
Key Features
- Epitaxial Planar Die Construction
- Complementary PNP Type Available (MMDT5401)
- Ideal for Medium Power Amplification and Switching
- Ultra-Small Surface Mount Package
- Lead Free/RoHS Compliant (Note 3)
- "Green" Device (Note 4 and 5)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 200mA | Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | Power - Max | 200mW |
Frequency - Transition | 300MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 | Base Product Number | MMDT5551 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![MMDT5451-7-F](/files/uploads/product/s/5a3b08809286488d8dafaaf530e7f10f.webp)
MMDT5451-7-F
Diodes Inc presents the MMDT5451-7-F
![MMBT3904WT1G](/files/uploads/product/s/c79d9715a0ae4e3291b1b0cfab6ce93f.webp)
MMBT3904WT1G
The MMBT3904WT1G is a NPN-type Bipolar Transistor, ideal for applications requiring current levels of up to 200mA and voltage ratings of 60V
![MMBT2222AWT1G](/files/uploads/product/s/0b1d639ac38d4dbfa1a9deb38dcfd220.webp)
MMBT2222AWT1G
150mW Power Dissipation
![MMUN2214LT1G](/files/uploads/product/s/80c086cf033746fe9a5d1552e622ee56.webp)
MMUN2214LT1G
SOT-23 T/R Trans Digital BJT NPN 50V 100mA 400mW
![MMBTA42-TP](/files/uploads/product/s/50cd4818b0434dc6a8c81905e021d487.webp)
MMBTA42-TP
NPN Silicon High Voltage Transistor
![MMSS8050-H-TP](/files/uploads/product/s/825bc2374efc41c488e44fa7b34b2321.webp)
MMSS8050-H-TP
This product features a 25V voltage rating and can support a maximum current of 1500mA
![FMMT3904TA](/img/package/sot23.jpg)
FMMT3904TA
Featuring NPN polarity and constructed from Silicon, the FMMT3904TA is a small signal bipolar transistor capable of carrying up to 0
![FMMT38C](/img/package/sot23.jpg)
FMMT38C
High power amplification transistors
![MMBF170](/files/uploads/product/s/023410ba77734a5ca6a1beb63cf94d63.webp)
MMBF170
Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R
![MMBFJ111](/img/package/sot23.jpg)
MMBFJ111
Trans JFET N-CH 3-Pin SOT-23 T/R
![IXFN180N20](/img/package/sot.jpg)
IXFN180N20
IXFN180N20: Power MOSFET with N-type channel, capable of handling 200 volts and 180 amperes, packaged in 4 pins using SOT-227B standard
![2SC1568](/img/package/to126.jpg)
2SC1568
Transistors (BJT) - Single
![CM200DU-12F](/img/package/module.jpg)
CM200DU-12F
N-channel IGBT module with 600V and 200A rating
![NVMFS5A140PLZT1G](/img/package/so8.jpg)
NVMFS5A140PLZT1G
MOSFET NVMFS5A140PLZT1G boasts a -40V voltage threshold and a resistance of 4.2 megohms, making it a suitable choice for single-channel setups
![SCT2120AF](/img/package/to220ab.jpg)
SCT2120AF
Enhance your driving experience with efficient audio processing. (71 chars)
![FQB55N10TM](/img/package/d2pak3.jpg)
FQB55N10TM
Three-pin component with two additional tabs, designed in D2PAK package
![TIM5964-35SLA](/img/product.png)
TIM5964-35SLA
Advanced semiconductor solution for demanding radio frequency demand
![KST2907AMTF](/img/package/sot23.jpg)
KST2907AMTF
PNP Epitaxial Silicon Transistor
![CM100TU-12F](/img/package/module.jpg)
CM100TU-12F
CM100TU-12F Trans IGBT Module
![BSC050N10NS5ATMA1](/img/package/son8.jpg)
BSC050N10NS5ATMA1
N-CHANNEL, 100V, 100A, 5MOHM, SuperSO8