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MMDT5551-7-F

Transistor featuring two NPN junctions, suitable for voltages up to 160V and currents up to 0.2A in an SOT363-6 package

Quantity Unit Price(USD) Ext. Price
10 $0.046 $0.46
100 $0.037 $3.70
300 $0.032 $9.60
3000 $0.029 $87.00
6000 $0.026 $156.00
9000 $0.025 $225.00

Inventory:7,478

*The price is for reference only.
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Overview of MMDT5551-7-F

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SOT-363

Key Features

  • Epitaxial Planar Die Construction
  • Complementary PNP Type Available (MMDT5401)
  • Ideal for Medium Power Amplification and Switching
  • Ultra-Small Surface Mount Package
  • Lead Free/RoHS Compliant (Note 3)
  • "Green" Device (Note 4 and 5)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Power - Max 200mW
Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 Base Product Number MMDT5551

Warranty & Returns

Warranty, Returns, and Additional Information

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