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MMDT5451-7-F

Diodes Inc presents the MMDT5451-7-F

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Overview of MMDT5451-7-F

The MMDT5451-7-F is a dual PNP digital transistor array IC that combines two transistors in a single package. Each transistor is configured as a general-purpose PNP device, providing versatility in various circuit designs requiring PNP transistors.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E1: Emitter of Transistor 1
  • B1: Base of Transistor 1
  • C1: Collector of Transistor 1
  • E2: Emitter of Transistor 2
  • B2: Base of Transistor 2
  • C2: Collector of Transistor 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMDT5451-7-F IC for a visual representation.

Key Features

  • Dual PNP Transistor Array: Contains two PNP transistors in a single package, offering design flexibility in compact circuits.
  • High Current Gain: The transistors in the MMDT5451-7-F exhibit high current gain, making them suitable for amplification applications.
  • Low Saturation Voltage: With low saturation voltage characteristics, this IC helps minimize power loss in switching applications.
  • Switching Speed: The MMDT5451-7-F offers fast switching speeds, enabling quick response times in electronic circuits.
  • Compact Package: Available in a small surface-mount package for space-constrained designs.

Note: For detailed technical specifications, please refer to the MMDT5451-7-F datasheet.

Application

  • Amplification Circuits: Ideal for use in amplifier circuits where PNP transistors are required.
  • Switching Circuits: Suitable for switching applications due to its fast response and low saturation voltage.
  • Signal Processing: Can be used in signal processing circuits for various electronic applications.

Functionality

The MMDT5451-7-F dual PNP digital transistor array provides two PNP transistors for versatile use in electronic circuits requiring PNP switching or amplification.

Usage Guide

  • Base Connections: Connect the base (B1, B2) of each transistor to the input signal or control voltage.
  • Emitter and Collector Connections: Connect the emitter (E1, E2) and collector (C1, C2) of each transistor as per the circuit requirements.

Equivalent

For similar functionalities, consider these alternatives to the MMDT5451-7-F:

  • MMDT5551-7-F: This digital transistor array IC offers similar characteristics and performance with slight variations in specifications.
  • BC847C: A general-purpose PNP transistor that can be used as an alternative to the MMDT5451-7-F in certain applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 160V, 150V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V / 60 @ 10mA, 5V Power - Max 200mW
Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 Base Product Number MMDT5451

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