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MMUN2214LT1G

SOT-23 T/R Trans Digital BJT NPN 50V 100mA 400mW

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Overview of MMUN2214LT1G

The MMUN2214LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for various amplification and switching applications. This transistor offers high voltage capability and low leakage current, making it suitable for use in diverse electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Output terminal for the current flow
  • Base (B): Control terminal for activating the transistor
  • Collector (C): Terminal that collects the current from the transistor

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMUN2214LT1G transistor for a visual representation.

Key Features

  • High Voltage Capability: The MMUN2214LT1G can handle high voltages, allowing for use in applications requiring voltage amplification.
  • Low Leakage Current: This transistor exhibits low leakage current, ensuring minimal power dissipation and improved efficiency.
  • General-Purpose NPN Transistor: Suitable for a wide range of amplification and switching tasks in electronic circuits.
  • Compact Package: Available in a small SOT-23 package for space-efficient PCB designs.
  • Reliable Performance: The MMUN2214LT1G delivers reliable performance across various operating conditions.

Note: For detailed technical specifications, please refer to the MMUN2214LT1G datasheet.

Application

  • Amplification: Ideal for amplifying signals in audio, radio frequency, and other electronic circuits.
  • Switching: Can be used for switching operations in digital logic circuits and power control applications.
  • Sensor Interfaces: Suitable for interfacing sensors and transducers with microcontrollers and other electronic devices.

Functionality

The MMUN2214LT1G NPN transistor serves as a versatile component for signal amplification and switching tasks in electronic systems. It provides reliable performance and high voltage capabilities for various applications.

Usage Guide

  • Emitter (E): Connect the emitter terminal to the output load or circuit.
  • Base (B): Apply the control signal to the base terminal to activate the transistor.
  • Collector (C): Connect the collector terminal to the power supply or next stage in the circuit.

Frequently Asked Questions

Equivalent

For similar functionalities, consider these alternatives to the MMUN2214LT1G:

  • MMBT2222ALT1G: A general-purpose NPN transistor with comparable characteristics to the MMUN2214LT1G.
  • BC547B: This is a popular NPN transistor known for its general-purpose amplification and switching capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
IC Continuous (A) 0.1 V(BR)CEO Min (V) 50
hFE Min 80 R1 (kΩ) 10
R2 (kΩ) 47 R1/R2 Typ 0.213
Vi(off) Max (V) 0.5 Vi(on) Min (V) 1.4
Pricing ($/Unit) $0.0116

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