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IXFN44N50

IXFN44N50 is a discrete semiconductor module capable of handling 500 volts and a current of 44 amperes

Quantity Unit Price(USD) Ext. Price
1 $55.617 $55.62
200 $22.192 $4,438.40
500 $21.450 $10,725.00
1000 $21.083 $21,083.00

Inventory:7,166

*The price is for reference only.
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Overview of IXFN44N50

The IXFN44N50 is a high power MOSFET transistor designed for use in high voltage and high-speed switching applications. This MOSFET features a high current rating and low on-state resistance, making it suitable for power electronics and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN44N50 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The IXFN44N50 is designed to handle high voltage levels, making it suitable for high power applications.
  • Low On-State Resistance: This MOSFET exhibits low on-state resistance, resulting in minimal power dissipation and high efficiency.
  • High Current Handling: With its high current rating, the IXFN44N50 is capable of handling large power loads in demanding applications.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics, enabling rapid transitions between on and off states.

Note: For detailed technical specifications, please refer to the IXFN44N50 datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, inverters, and motor drives requiring high power switching.
  • Industrial Control Systems: Suitable for industrial control and automation systems where high voltage and high current capabilities are essential.
  • Renewable Energy: Used in renewable energy systems such as solar inverters and wind turbine converters for efficient power conversion.

Functionality

The IXFN44N50 MOSFET is designed to handle high power applications with its high voltage rating, low on-state resistance, and high current handling capabilities. It enables efficient and reliable power control in various electronic systems.

Usage Guide

  • Gate Drive: Apply the appropriate gate voltage to turn the MOSFET on and off effectively.
  • Load Connection: Connect the load to the drain and source terminals while ensuring proper heat dissipation for high power applications.
  • Heat Management: Implement adequate heat sinking to manage the heat generated during high power operation.

Frequently Asked Questions

Q: Can the IXFN44N50 be used in high-speed switching applications?
A: Yes, the IXFN44N50 offers fast switching speed and is suitable for high-speed switching requirements in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IXFN44N50:

  • IXFN45N50: This is a similar high power MOSFET transistor with comparable characteristics suitable for high voltage and high-speed applications.
  • IXFN46N50: Another alternative from the same series, providing similar high power handling and fast switching capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.12
Continuous Drain Current @ 25 ℃ (A) 44 Gate Charge (nC) 270
Input Capacitance, CISS (pF) 8400 Thermal resistance [junction-case] (K/W) 0.24
Configuration Single Package Type SOT-227
Power Dissipation (W) 520 Maximum Reverse Recovery (ns) 250
Sample Request No

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