2N4858A
TO-18 packaged N-channel JFET transistor, made of silicon and capable of handling up to 40 volts
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $5.211 | $5.21 |
200 | $2.080 | $416.00 |
500 | $2.012 | $1,006.00 |
1000 | $1.977 | $1,977.00 |
Inventory:8,724
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Part Number : 2N4858A
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Package/Case : TO-18-3
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Brand : Interfet
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Components Classification : JFETs
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Datesheet : 2N4858A DataSheet (PDF)
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Series : 2N4858
The 2N4858A is an N-channel JFET (junction field-effect transistor) designed for high-speed switching applications and amplifier circuits. It offers low on-resistance and high transconductance, making it suitable for a wide range of electronic applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2N4858A JFET for a visual representation. Note: For detailed technical specifications, please refer to the 2N4858A datasheet. Functionality The 2N4858A N-channel JFET is designed for efficient signal amplification and high-speed switching in electronic circuits. It offers low on-resistance and high transconductance, making it a versatile component for a wide range of applications. Usage Guide Q: What is the maximum voltage rating for the 2N4858A? Q: Can the 2N4858A be used for audio signal amplification? For similar functionalities, consider these alternatives to the 2N4858A:Overview of 2N4858A
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The 2N4858A can handle maximum drain-source voltage ratings specified in the datasheet. Please refer to the datasheet for precise details.
A: Yes, the 2N4858A is suitable for amplifying audio signals and can be utilized in audio amplifier circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | JFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-18-3 | Transistor Polarity | N-Channel |
Configuration | Single | Vgs - Gate-Source Breakdown Voltage | - 40 V |
Gate-Source Cutoff Voltage | - 4 V | Rds On - Drain-Source Resistance | 60 Ohms |
Pd - Power Dissipation | 1.8 W | Brand | InterFET |
Product Type | JFETs | Factory Pack Quantity | 1 |
Subcategory | Transistors | Type | JFET |
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