• packageimg
packageimg

SI3437DV-T1-GE3

MOSFET designed for -150V drain-source voltage and 20V gate-source voltage, enclosed in a TSOP-6 package

Quantity Unit Price(USD) Ext. Price
1 $0.385 $0.38
10 $0.306 $3.06
30 $0.272 $8.16
100 $0.229 $22.90
500 $0.210 $105.00
1000 $0.199 $199.00

Inventory:7,741

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SI3437DV-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI3437DV-T1-GE3

The SI3437DV-T1-GE3 is a power MOSFET designed for high-speed switching applications in power management circuits. It features a low on-resistance and high current capability, making it suitable for various power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Power Supply Input
  • GND: Ground Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI3437DV-T1-GE3 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: Provides efficient power management with minimal voltage drops.
  • High Current Capability: Capable of handling high currents for demanding applications.
  • Fast Switching Speed: Enables high-speed switching operations for improved efficiency.
  • Wide Operating Voltage Range: Compatible with various voltage levels for versatile applications.
  • Enhanced Thermal Performance: Designed to dissipate heat effectively for reliable operation.

Note: For detailed technical specifications, please refer to the SI3437DV-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management circuits for efficient power delivery.
  • Motor Control: Suitable for motor control applications requiring high-speed switching.
  • LED Lighting: Used in LED driver circuits for controlling and regulating LED illumination.

Functionality

The SI3437DV-T1-GE3 MOSFET is designed to control the flow of power in electronic circuits, offering low on-resistance and high current handling capabilities for effective power management.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching of the MOSFET.
  • Power Supply: Connect the power supply input (VCC) to the appropriate voltage level.
  • Load Connection: Connect the load between the drain (D) and source (S) terminals.

Frequently Asked Questions

Q: What is the maximum current rating of the SI3437DV-T1-GE3?
A: The SI3437DV-T1-GE3 can handle a maximum current of X amperes.

Q: Is the SI3437DV-T1-GE3 suitable for high-frequency applications?
A: Yes, the SI3437DV-T1-GE3 offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SI3437DV-T1-GE3:

  • SI2301DS-T1-GE3: A power MOSFET with comparable performance characteristics for power management applications.
  • AON6403: This MOSFET offers similar high-speed switching capabilities and low on-resistance for power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 1.4 A Rds On - Drain-Source Resistance 750 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.2 W
Channel Mode Enhancement Tradename TrenchFET
Series SI3 Brand Vishay Semiconductors
Configuration Single Fall Time 14 ns
Height 1.1 mm Length 3.05 mm
Product Type MOSFET Rise Time 29 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 28 ns
Typical Turn-On Delay Time 14 ns Width 1.65 mm
Part # Aliases SI3437DV-T1-BE3 SI3437DV-GE3 Unit Weight 0.000705 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

SGB10N60A

SGB10N60A

SGB10N60A TO-263 IGBT details
IRGP50B60PDPBF

IRGP50B60PDPBF

Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC
DMN55D0UT-7

DMN55D0UT-7

N-Channel Enhancement MOSFET SOT-23
KSC3503DSTU

KSC3503DSTU

Pin with Three-Tab Configuration
VRF141

VRF141

Trans RF MOSFET N-CH 80V 20A 4-Pin Style M-174 Box
ZDT6790TA

ZDT6790TA

ZDT6790TA: Dual NPN and PNP Bipolar Transistor, 2 Amps, 45/40 Volts, 8-Pin SM
DMN5L06KQ-7

DMN5L06KQ-7

MOSFET 2N7002 Family SOT23 Tape and Reel 3K
SCH2080KEC

SCH2080KEC

N-Channel Metal-oxide Semiconductor FET
FJN3303RTA

FJN3303RTA

Si NPN transistor with biasing for simplified application
IRF6216PBF

IRF6216PBF

P-channel MOSFET, with a voltage rating of 150V and a maximum current of 2.2A, housed in an 8-pin SOIC package, designated as IRF6216PBF