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SCT2120AFC

SiC MOSFET rated for 650V with current capability varying from 29 to 220A

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Overview of SCT2120AFC

The SCT2120AFC is a high-performance SiC power MOSFET designed for use in advanced power electronic applications. It features ultra-low on-resistance and fast switching capabilities, making it ideal for high-frequency and high-efficiency power conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Substrate Connection
  • VDD: Positive Power Supply
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SCT2120AFC for a visual representation.

Key Features

  • Ultra-Low On-Resistance: The SCT2120AFC offers extremely low on-resistance, resulting in minimal power dissipation and high efficiency in power applications.
  • Fast Switching Speed: With its fast switching capabilities, this power MOSFET enables high-frequency operation and rapid power control.
  • High Temperature Performance: Designed to operate at high temperatures, the SCT2120AFC is suitable for demanding industrial and automotive applications.
  • High Breakdown Voltage: The MOSFET features a high breakdown voltage, ensuring robust performance in high-voltage applications.
  • Low Gate Charge: The low gate charge of the SCT2120AFC allows for efficient switching and reduced power losses in the gate drive circuit.

Note: For detailed technical specifications, please refer to the SCT2120AFC datasheet.

Application

  • Power Inverters: Ideal for use in high-efficiency power inverters for renewable energy systems and motor drives.
  • Switched-Mode Power Supplies: Suitable for high-frequency and high-efficiency switched-mode power supply (SMPS) designs.
  • Electric Vehicles: Used in power electronic circuits for electric and hybrid electric vehicle (EV/HEV) applications.

Functionality

The SCT2120AFC is a high-performance SiC power MOSFET designed to provide efficient power control and high-frequency operation in various power electronic applications.

Usage Guide

  • Power Supply: Connect VDD (Positive Power Supply) and VSS (Substrate Connection) to the appropriate power sources.
  • Gate Control: Apply the gate signal to the G (Gate) pin to control the switching of the MOSFET.
  • Load Connection: Connect the load or power source to the D (Drain) and S (Source) terminals.

Frequently Asked Questions

Q: What is the maximum operating temperature of the SCT2120AFC?
A: The SCT2120AFC is designed to operate at temperatures of up to 200°C, making it suitable for high-temperature applications.

Q: Can the SCT2120AFC be used in high-frequency power converters?
A: Yes, the SCT2120AFC offers fast switching speed and low on-resistance, making it well-suited for high-frequency power conversion circuits.

Equivalent

For similar functionalities, consider these alternatives to the SCT2120AFC:

  • SCT2080Y
  • SCT3022AL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology SiC
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 29 A
Rds On - Drain-Source Resistance 120 mOhms Vgs - Gate-Source Voltage - 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage 1.6 V Qg - Gate Charge 61 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 165 W Channel Mode Enhancement
Series SCT2x Brand ROHM Semiconductor
Configuration Single Fall Time 19 ns
Forward Transconductance - Min 2.7 S Product Type MOSFET
Rise Time 31 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time 60 ns Typical Turn-On Delay Time 22 ns
Part # Aliases SCT2120AF Unit Weight 0.068784 oz

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