SCT2120AFC
SiC MOSFET rated for 650V with current capability varying from 29 to 220A
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Part Number : SCT2120AFC
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Package/Case : TO220-3
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Brand : Rohm Semiconductor
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Components Classification : Single FETs, MOSFETs
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Datesheet : SCT2120AFC DataSheet (PDF)
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Series : SCT2X
The SCT2120AFC is a high-performance SiC power MOSFET designed for use in advanced power electronic applications. It features ultra-low on-resistance and fast switching capabilities, making it ideal for high-frequency and high-efficiency power conversion circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SCT2120AFC for a visual representation. Note: For detailed technical specifications, please refer to the SCT2120AFC datasheet. Functionality The SCT2120AFC is a high-performance SiC power MOSFET designed to provide efficient power control and high-frequency operation in various power electronic applications. Usage Guide Q: What is the maximum operating temperature of the SCT2120AFC? Q: Can the SCT2120AFC be used in high-frequency power converters? For similar functionalities, consider these alternatives to the SCT2120AFC:Overview of SCT2120AFC
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SCT2120AFC is designed to operate at temperatures of up to 200°C, making it suitable for high-temperature applications.
A: Yes, the SCT2120AFC offers fast switching speed and low on-resistance, making it well-suited for high-frequency power conversion circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | SiC |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 29 A |
Rds On - Drain-Source Resistance | 120 mOhms | Vgs - Gate-Source Voltage | - 6 V, + 22 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V | Qg - Gate Charge | 61 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 165 W | Channel Mode | Enhancement |
Series | SCT2x | Brand | ROHM Semiconductor |
Configuration | Single | Fall Time | 19 ns |
Forward Transconductance - Min | 2.7 S | Product Type | MOSFET |
Rise Time | 31 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time | 60 ns | Typical Turn-On Delay Time | 22 ns |
Part # Aliases | SCT2120AF | Unit Weight | 0.068784 oz |
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