AON7262E
60V N Channel MOSFET with 6.2mΩ resistance at 10V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.694 | $0.69 |
10 | $0.580 | $5.80 |
30 | $0.523 | $15.69 |
100 | $0.468 | $46.80 |
500 | $0.382 | $191.00 |
1000 | $0.364 | $364.00 |
Inventory:8,395
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Part Number : AON7262E
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Package/Case : DFN-3
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Brands : Alpha & Omega Semiconductor Inc.
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Components Categories : Single FETs, MOSFETs
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Datesheet : AON7262E DataSheet (PDF)
The AON7262E is a high-performance N-channel MOSFET with advanced technology for power management applications. This MOSFET is designed to offer low on-state resistance and fast switching capabilities, making it ideal for various power supply and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the AON7262E MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the AON7262E datasheet. Functionality The AON7262E MOSFET is a high-performance component that facilitates power control and management in various electronic systems. It offers low resistance, fast switching, and reliable operation for effective power handling. Usage Guide Q: Is the AON7262E suitable for high-power applications? For similar functionalities, consider these alternatives to the AON7262E:Overview of AON7262E
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the AON7262E's low on-state resistance and high performance make it suitable for high-power applications requiring efficient power handling.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
ECCN (US) | EAR99 | Part Status | Active |
HTS | 8541.29.00.95 | Category | Power MOSFET |
Configuration | Single Quad Drain Triple Source | Process Technology | TMOS |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Continuous Drain Current (A) | 34 | Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 1 | Maximum Drain Source Resistance (mOhm) | 6.2@10V |
Typical Gate Charge @ Vgs (nC) | 30@10V | Typical Gate Charge @ 10V (nC) | 30 |
Typical Input Capacitance @ Vds (pF) | 1652@30V | Maximum Power Dissipation (mW) | 43000 |
Typical Fall Time (ns) | 7 | Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 29 | Typical Turn-On Delay Time (ns) | 6 |
Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel | Typical Drain Source Resistance @ 25°C (mOhm) | 4.8@10V|[email protected] |
Mounting | Surface Mount | Package Height | 0.78 |
Package Width | 3 | Package Length | 3 |
PCB changed | 8 | Standard Package Name | DFN |
Supplier Package | DFN-A EP | Pin Count | 8 |
Warranty & Returns
Warranty, Returns, and Additional Information
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