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SIR638DP-T1-GE3

Power MOSFET engineered for efficient power management

Quantity Unit Price(USD) Ext. Price
1 $0.437 $0.44
10 $0.429 $4.29
30 $0.422 $12.66
100 $0.416 $41.60

Inventory:5,689

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Overview of SIR638DP-T1-GE3

The SIR638DP-T1-GE3 is a power MOSFET designed for high-efficiency power management applications. It features a low on-resistance and high load current capability, making it suitable for various power switching and conversion tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Positive Power Supply
  • GND: Power Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIR638DP-T1-GE3 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SIR638DP-T1-GE3 offers a low on-resistance for efficient power conversion and minimal power loss.
  • High Load Current Capability: With its high load current handling capacity, this MOSFET is capable of managing substantial power loads.
  • High Efficiency: Designed for high-efficiency power management, the SIR638DP-T1-GE3 maximizes power conversion efficiency.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, enabling rapid switching between on and off states.
  • Robust Design: The SIR638DP-T1-GE3 features a robust design with built-in protection mechanisms for reliable operation in demanding applications.

Note: For detailed technical specifications, please refer to the SIR638DP-T1-GE3 datasheet.

Application

  • Power Conversion: Ideal for power switching and conversion applications, including DC-DC converters and motor control.
  • Voltage Regulation: Suitable for use in voltage regulation circuits and power supply units requiring efficient power management.
  • Power Distribution: The SIR638DP-T1-GE3 can be used in power distribution systems to control and manage power flows.

Functionality

The SIR638DP-T1-GE3 is a power MOSFET that enables efficient power management and control. It is designed to handle high power loads while maintaining high efficiency and reliability.

Usage Guide

  • Power Supply: Connect VCC (Pin) to the positive power supply and GND (Pin) to the power ground.
  • Load Connection: Use the D (Drain) and S (Source) pins to connect the MOSFET to the load circuit.
  • Gate Control: Apply appropriate voltage to the G (Gate) pin to control the switching behavior of the MOSFET.

Frequently Asked Questions

Q: Is the SIR638DP-T1-GE3 suitable for high-frequency switching applications?
A: Yes, this MOSFET is designed for fast switching speeds and is suitable for high-frequency switching tasks.

Equivalent

For similar functionalities, consider these alternatives to the SIR638DP-T1-GE3:

  • FDMC8200: This is a power MOSFET with similar performance characteristics, offering comparable power management capabilities.
  • IRFZ44N: Another power MOSFET suitable for high-efficiency power management applications, providing similar load handling and switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 880 uOhms Vgs - Gate-Source Voltage - 16 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V Qg - Gate Charge 204 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay / Siliconix Configuration Single
Fall Time 10 ns Product Type MOSFET
Rise Time 21 ns Factory Pack Quantity 3000
Subcategory MOSFETs Typical Turn-Off Delay Time 52 ns
Typical Turn-On Delay Time 20 ns Unit Weight 0.017870 oz

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