IXFK98N50P3
N-channel power MOSFET with 500V voltage rating and 98A current rating in TO-264AA package
Inventory:6,721
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IXFK98N50P3
-
Package/Case : TO-264-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IXFK98N50P3 DataSheet (PDF)
-
Series : IXFK98N50
Overview of IXFK98N50P3
Introducing the latest addition to our renowned Polar-Series product line, the PolarP3™ HiPerFET™ product family sets a new standard for high-performance FETs in the 300V to 600V range. By combining the key factors of gate charge and on-state resistance into a Figure of Merit calculation, these FETs offer unmatched performance compared to conventional super junction technologies. Users can benefit from a notable 12% decrease in on-state resistance (Rdson), a 14% reduction in gate charge (Qg), and an impressive 20% increase in maximum power dissipation (Pd). Additionally, the reduced chip thicknesses lead to lower thermal resistances and a higher total power density for the device
Key Features
- Low leakage current
- High efficiency with low EMI emission
- Compact design for space-saving
Application
- Next-generation power electronics
- Efficient renewable energy solutions
- Smart power control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | HiPerFET™, Polar3™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 98A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 50mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 197 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 13100 pF @ 25 V | Power Dissipation (Max) | 1300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-264AA (IXFK) | Package / Case | TO-264-3, TO-264AA |
Base Product Number | IXFK98 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
IXFB100N50P
High-power N-channel MOSFET with 3+Tab Pin Configuration
IXFH44N50P
44A, 500V N-channel transistor with TO-247AD packaging
IXFX180N25T
MOSFET Discrete Component with 180A current capability and 250V voltage rating
IXFX48N50Q
Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package
IXTA10P50P
Ready to Ship within 1 Day
IXTP80N10T
MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance
IXKR25N80C
Three-pin N-channel MOSFET with 800V and 25A rating
IXFK94N50P2
Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264
IXTN110N20L2
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling
IXTP96P085T
Metal-oxide Semiconductor FET, P-Channel, 96A Drain Current, 85V Voltage, 0.013ohm On-State Resistance, TO-220AB Housing
SIA446DJ-T1-GE3
6-Pin SC-70 N-Channel MOSFET rated at 7.7A Drain Current, 150V Voltage, and 0.177ohm On-Resistance
FZT955TA
PNP Bipolar Junction Transistor for General Purpose Applications with 140V Voltage and 4A Current
KSC2316YTA
NPN Bipolar Transistor Epitaxial Transistor - BJT
IXFH20N60Q
TO-247AD Plastic Package-3
SI2338DS-T1-GE3
Vishay Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23
BUZ77B
Advanced N-channel enhancement mode power transistor technology for precise switchin
AOD3N50
N-Channel Power MOSFET with 500V Voltage Rating
MMBTA42LT3G
Low Power NPN General Purpose Transistor
JANTX2N3741
JANTX2N3741 details: TO-66 (TO-213AA) package, ROHS compliant
HGTG20N60C3
HGTG20N60C3 is an Insulated Gate Bipolar Transistor used in electronic devices