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HGTG20N60C3

HGTG20N60C3 is an Insulated Gate Bipolar Transistor used in electronic devices

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Overview of HGTG20N60C3

The HGTG20N60C3 is a N-channel IGBT designed for high power switching applications in electronic circuits. This IGBT is capable of handling high currents and voltages, making it suitable for power electronics and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector: Current Terminal
  • Gate: Control Terminal
  • Emitter: Current Terminal
  • N/A: Not connected

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the HGTG20N60C3 for a more visual representation.

Key Features

  • High Current and Voltage Handling: The HGTG20N60C3 is capable of handling high currents and voltages, making it suitable for power applications.
  • Fast Switching Speed: This IGBT offers fast switching characteristics, enabling efficient power control in electronic circuits.
  • Low Saturation Voltage: The HGTG20N60C3 exhibits low saturation voltage, leading to reduced power losses during operation.
  • Temperature Stability: With temperature-stable behavior, this IGBT maintains reliable performance across a wide temperature range.

Note: For detailed technical specifications, please refer to the HGTG20N60C3 datasheet.

Application

  • Power Electronics: The HGTG20N60C3 is commonly used in power electronic circuits for applications such as motor control, power supplies, and inverters.
  • Switching Applications: It is suitable for high-power switching applications where high current and voltage handling is required.

Functionality

The HGTG20N60C3 serves as a robust and efficient N-channel IGBT for high-power switching and control applications. Its high current and voltage capabilities make it a valuable component in power electronics.

Usage Guide

  • Power Supply: Connect the collector and emitter terminals to the appropriate power supply voltages based on the application requirements.
  • Gate Control: Apply the necessary gate voltage to control the switching operation of the IGBT.
  • Load Connection: Connect the load to the collector or emitter terminal based on the circuit configuration.

Frequently Asked Questions

Q: Is the HGTG20N60C3 suitable for high-frequency switching applications?
A: The HGTG20N60C3 is primarily designed for high-power applications and may not be optimized for high-frequency switching. Consider alternative components for high-frequency requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors Technology Si
Package / Case TO-247-3 Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 600 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 45 A
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series HGTG20N60 Brand onsemi / Fairchild
Continuous Collector Current Ic Max 45 A Height 20.82 mm
Length 15.87 mm Product Type IGBT Transistors
Subcategory IGBTs Width 4.82 mm
Unit Weight 1.340411 oz

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