IPG20N04S4L08ATMA1
N-channel MOSFET: 40V, 20A, TDSON-8 package, OptiMOS-T2
Inventory:9,153
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Part Number : IPG20N04S4L08ATMA1
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Package/Case : TDSON-8
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Brand : Infineon Technologies
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Components Classification : FET, MOSFET Arrays
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Datesheet : IPG20N04S4L08ATMA1 DataSheet (PDF)
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Series : IPG20N04S4L-08
Overview of IPG20N04S4L08ATMA1
The Infineon Technologies IPG20N04S4L08ATMA1 power MOSFET transistor represents a cutting-edge solution for various high-power applications. Boasting a 40V drain-source voltage rating and a continuous drain current of 70A, this MOSFET offers dependable performance and efficiency. Its advanced trench semiconductor technology enhances switching speeds, thermal efficiency, and reliability, while the low on-resistance of 5.9mΩ reduces power losses. The compact TO-220 package with a lead (Pb)-free design ensures environmental friendliness and compliance with RoHS regulations, making it a top choice for energy-efficient designs
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | OptiMOS-T2 | Product Status | Active |
| Technology | Si | Configuration | Dual |
| FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A | Rds On (Max) @ Id, Vgs | 8.2mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 22µA | Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 25V | Power - Max | 54W |
| Operating Temperature | -55°C ~ 175°C (TJ) | Grade | Automotive |
| Qualification | AEC-Q101 | Mounting Type | Surface Mount |
| Package / Case | TDSON-8 | Supplier Device Package | PG-TDSON-8-4 |
| Base Product Number | IPG20N | Manufacturer | Infineon |
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 7.2 mOhms, 7.2 mOhms | Vgs - Gate-Source Voltage | - 16 V, + 16 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 39 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 54 W | Channel Mode | Enhancement |
| Tradename | OptiMOS | Brand | Infineon Technologies |
| Fall Time | 20 ns, 20 ns | Height | 1.27 mm |
| Length | 5.9 mm | Product Type | MOSFET |
| Rise Time | 3 ns, 3 ns | Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 40 ns, 40 ns | Typical Turn-On Delay Time | 7 ns, 7 ns |
| Width | 5.15 mm | Part # Aliases | IPG20N04S4L-08 SP000705576 |
| Unit Weight | 0.003415 oz |
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