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IPW65R080CFD

Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor

Quantity Unit Price(USD) Ext. Price
1 $5.351 $5.35
10 $4.701 $47.01
30 $4.305 $129.15
100 $3.973 $397.30

Inventory:9,800

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Overview of IPW65R080CFD

The IPW65R080CFD is a power MOSFET transistor designed for high-performance applications in power electronics. It features a low on-resistance and high switching speed, making it suitable for various power management and conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G(S): Gate (Source)
  • V(BR)DSS: Drain-Source Voltage
  • I(D): Drain Current
  • I(DM): Drain Current Pulsed
  • P(TOT): Total Power Dissipation
  • R(DS)on: On-Resistance
  • t(d(on)): Turn-On Delay Time
  • t(r): Rise Time
  • t(d(off)): Turn-Off Delay Time
  • t(f): Fall Time

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPW65R080CFD MOSFET for a visual representation.

Key Features

  • High Switching Speed: Offers rapid switching times for efficient power control.
  • Low On-Resistance: Minimizes power losses and enhances overall efficiency.
  • High Power Dissipation: Capable of handling high power levels for robust performance.
  • Enhanced Thermal Performance: Designed for improved heat dissipation in high-power applications.
  • Robust Construction: Built to withstand high voltage and current levels for reliable operation.

Note: For detailed technical specifications, please refer to the IPW65R080CFD datasheet.

Application

  • Power Electronics: Ideal for use in power supply units, motor control systems, and inverters.
  • Switching Circuits: Suitable for switching applications in high-frequency power converters.
  • Voltage Regulation: Used in voltage regulators and DC-DC converters for efficient power management.

Functionality

The IPW65R080CFD power MOSFET transistor provides high-speed switching capability and low on-resistance, making it a reliable component for power management solutions in various electronic systems.

Usage Guide

  • Gate Connection: Connect the gate pin to the control signal for controlling the MOSFET switching.
  • Drain Connection: Connect the drain pin to the load or power input side of the circuit.
  • Source Connection: Connect the source pin to the ground or reference potential.

Frequently Asked Questions

Q: Can the IPW65R080CFD be used in high-power applications?
A: Yes, the IPW65R080CFD is designed for high-power applications due to its low on-resistance and high power dissipation capabilities.

Equivalent

For alternative power MOSFET options with similar features, consider the following:

  • IRF3205: A power MOSFET with comparable performance characteristics suitable for power electronics applications.
  • IXFK44N50P: This MOSFET offers high power handling capabilities and fast switching speeds similar to the IPW65R080CFD.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

IDpuls max 137.0 A RthJC max 0.32 K/W
RthJA max 62.0 K/W Ptot max 391.0 W
VDS max 650.0 V Polarity N
ID max 43.3 A RDS (on) max 80.0 mΩ
Mounting THT Special Features fast recovery diode
Package TO-247 VGS(th) max 4.5 V
VGS(th) min 3.5 V Operating Temperature max 150.0 °C
Operating Temperature min -55.0 °C

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