HGTP12N60A4
Power transistor with positive temperature coefficient
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.913 | $1.91 |
200 | $0.742 | $148.40 |
400 | $0.716 | $286.40 |
800 | $0.703 | $562.40 |
Inventory:6,530
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Part Number : HGTP12N60A4
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Package/Case : TO-220-3
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Brands : Onsemi
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Components Categories : Single IGBTs
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Datesheet : HGTP12N60A4 DataSheet (PDF)
The HGTP12N60A4 is a 600V, 12A IGBT in a TO-220 package, designed for high power switching applications. It features low saturation voltage and fast switching, making it suitable for use in power supplies, motor control, and electronic ballasts. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the HGTP12N60A4 IGBT for a visual representation. Note: For detailed technical specifications, please refer to the HGTP12N60A4 datasheet. Functionality The HGTP12N60A4 is a high voltage, high current IGBT designed for efficient power switching applications. With its low saturation voltage and fast switching characteristics, it provides reliable power control in various electronic systems. Usage Guide Q: What is the maximum voltage rating for the HGTP12N60A4? Q: Can the HGTP12N60A4 be used for motor control in automotive systems? For similar functionalities, consider these alternatives to the HGTP12N60A4:Overview of HGTP12N60A4
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The HGTP12N60A4 has a maximum voltage rating of 600V, making it suitable for high voltage applications.
A: Yes, the HGTP12N60A4 is suitable for controlling high power motors in automotive applications, provided the necessary drive circuitry and protection measures are implemented.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 54 A |
Pd - Power Dissipation | 167 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi / Fairchild |
Continuous Collector Current | 54 A | Continuous Collector Current Ic Max | 54 A |
Gate-Emitter Leakage Current | +/- 250 nA | Height | 9.65 mm |
Length | 10.67 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 400 | Subcategory | IGBTs |
Width | 4.83 mm | Part # Aliases | HGTP12N60A4_NL |
Unit Weight | 0.211644 oz |
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