CM400HG-66H
High-Power Insulated Gate Bipolar Transistor for Industrial Applications
Inventory:5,037
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : CM400HG-66H
-
Package/Case : Module
-
Brand : Mitsubishi Materials U.S.A. Corporation
-
Components Classification : IGBT Modules
-
Datesheet : CM400HG-66H DataSheet (PDF)
-
Series : CM400
The CM400HG-66H is a high-power IGBT module designed for industrial and power electronics applications. It features a high voltage and high current rating, making it suitable for use in power conversion systems and motor drives. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CM400HG-66H IGBT module for a visual representation. Note: For detailed technical specifications, please refer to the CM400HG-66H datasheet. Functionality The CM400HG-66H IGBT module is designed to handle high power levels with efficient switching characteristics, making it a reliable component for power electronics applications. Usage Guide Q: Is the CM400HG-66H suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the CM400HG-66H:Overview of CM400HG-66H
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the CM400HG-66H is designed for high-frequency switching with fast turn-on and turn-off times.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 3.3 kV | Collector-Emitter Saturation Voltage | 3.3 V |
Continuous Collector Current at 25 C | 400 A | Gate-Emitter Leakage Current | 500 nA |
Pd - Power Dissipation | 4630 W | Package / Case | Module |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Mitsubishi Electric | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | SMD/SMT | Product Type | IGBT Modules |
Series | CM400 | Factory Pack Quantity | 2 |
Subcategory | IGBTs | Technology | Si |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BCM856BS,115](/img/package/sc70.jpg)
BCM856BS,115
Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![CM1000HC-66R](/img/package/module.jpg)
CM1000HC-66R
Insulated Gate Bipolar Transistor with 1000A current and 3300V voltage
![CM200HG-130H](/img/package/module.jpg)
CM200HG-130H
IGBT Modules for High Voltage Applications
![CM1500HC-66R](/img/package/module.jpg)
CM1500HC-66R
High Voltage Single IGBT Module
![FCMT125N65S3](/img/package/pqfn.jpg)
FCMT125N65S3
Trans MOSFET N-CH 650V 24A 4-Pin PQFN EP T/R
![MAC4DCMT4G](/img/package/dpak.jpg)
MAC4DCMT4G
Silicon Controlled Rectifier 4A 600V
![CM800HA-34H](/img/package/module.jpg)
CM800HA-34H
CM800HA-34H - High Voltage Single IGBT Module
![CM1800HC-34N](/img/package/module.jpg)
CM1800HC-34N
Single high voltage IGBT module
![CM900HB-90H](/img/package/module.jpg)
CM900HB-90H
CM900HB-90H High Voltage Single IGBT Module