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CM400HG-66H

High-Power Insulated Gate Bipolar Transistor for Industrial Applications

Inventory:5,037

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Overview of CM400HG-66H

The CM400HG-66H is a high-power IGBT module designed for industrial and power electronics applications. It features a high voltage and high current rating, making it suitable for use in power conversion systems and motor drives.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector
  • Emitter
  • Ga Gate
  • Gb Gate
  • Gc Gate
  • VCE: Collector-Emitter Voltage
  • IC: Continuous Collector Current
  • VGE: Gate-Emitter Voltage
  • IG: Gate Current

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CM400HG-66H IGBT module for a visual representation.

Key Features

  • High Power Rating: The CM400HG-66H offers a high power handling capability, suitable for demanding industrial applications.
  • High Voltage and Current: With its high voltage and current ratings, this IGBT module can handle large electrical loads and high switching frequencies.
  • Robust Construction: Designed for durability and reliability in harsh environments, ensuring long-term performance.
  • Fast Switching Speed: The CM400HG-66H provides fast switching times, enhancing efficiency in power conversion systems.

Note: For detailed technical specifications, please refer to the CM400HG-66H datasheet.

Application

  • Industrial Power Electronics: Ideal for use in industrial power electronics systems, including motor drives, inverters, and power supplies.
  • Power Conversion Systems: Suitable for high-power applications that require efficient power switching and control.
  • Renewable Energy: Used in renewable energy systems such as wind turbines and solar inverters for power conversion.

Functionality

The CM400HG-66H IGBT module is designed to handle high power levels with efficient switching characteristics, making it a reliable component for power electronics applications.

Usage Guide

  • Power Connections: Connect the collector, emitter, and gate pins according to the circuit requirements.
  • Gate Driving: Provide the appropriate gate voltage and current to ensure proper switching of the IGBT module.
  • Cooling: Use adequate thermal management solutions to dissipate heat generated during operation.

Frequently Asked Questions

Q: Is the CM400HG-66H suitable for high-frequency switching applications?
A: Yes, the CM400HG-66H is designed for high-frequency switching with fast turn-on and turn-off times.

Equivalent

For similar functionalities, consider these alternatives to the CM400HG-66H:

  • CM600HG-66H: A higher power rated IGBT module with similar voltage and current capabilities.
  • FF450R12ME4: This IGBT module offers comparable performance in high-power industrial applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Single
Collector- Emitter Voltage VCEO Max 3.3 kV Collector-Emitter Saturation Voltage 3.3 V
Continuous Collector Current at 25 C 400 A Gate-Emitter Leakage Current 500 nA
Pd - Power Dissipation 4630 W Package / Case Module
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Mitsubishi Electric Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Series CM400 Factory Pack Quantity 2
Subcategory IGBTs Technology Si

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