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HGTP10N120BN

This IGBT NPT, known as HGTP10N120BN, has a power dissipation of 298 W and features a TO-220-3 Through Hole package

Quantity Unit Price(USD) Ext. Price
1 $6.340 $6.34
10 $5.683 $56.83
30 $5.283 $158.49
100 $4.947 $494.70

Inventory:9,243

*The price is for reference only.
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Overview of HGTP10N120BN

When it comes to high voltage switching applications, the HGTP10N120BN offers unmatched performance and efficiency. Its NPT IGBT design ensures low conduction losses, making it an excellent choice for applications that require precision and reliability. Whether you're working on a solar inverter or a power supply unit, this IGBT is designed to meet the demands of modern electronics, providing a seamless experience for both designers and end-users. Trust the HGTP10N120BN to deliver exceptional results in any high voltage switching application

Key Features

  • Faster Switching Performance
  • Limited Inductance
  • Low Thermal Resistance
  • Epoxy Bonded Leads

Application

  • Power Protection System

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-220-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.45 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 35 A
Pd - Power Dissipation 298 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTP10N120BN
Brand onsemi / Fairchild Continuous Collector Current 35 A
Continuous Collector Current Ic Max 35 A Gate-Emitter Leakage Current +/- 250 nA
Height 9.4 mm Length 10.67 mm
Product Type IGBT Transistors Factory Pack Quantity 800
Subcategory IGBTs Width 4.83 mm
Part # Aliases HGTP10N120BN_NL Unit Weight 0.063493 oz

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