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HGTG30N60B3D

N-type Channel Insulated Gate Bipolar Transistor (IGBT) chip

Quantity Unit Price(USD) Ext. Price
1 $5.630 $5.63
200 $2.179 $435.80
450 $2.103 $946.35
900 $2.066 $1,859.40

Inventory:5,108

*The price is for reference only.
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Overview of HGTG30N60B3D

The HGTG30N60B3D IGBT transistor is a high-voltage, high-current device designed for power electronic applications. With a collector current rating of 60A and a collector emitter saturation voltage of 1.9V, this transistor is capable of handling significant power levels with ease. Its TO-247 case style ensures efficient heat dissipation, allowing for a power dissipation rating of 208W. The collector emitter voltage rating of 600V provides ample headroom for high voltage applications, while the 3-pin configuration simplifies installation and circuit design

Key Features

  • Fast Recovery Time: 50ns at TJ = 150°C
  • High Surge Capability
  • Isolation Voltage: 2500VDC min.
  • Low Leakage Current
  • High Temperature Range Operation
  • Easy to Handle, Robust Construction

Application

  • Banking
  • Food Processing
  • Government

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
REACH Details Technology Si
Package / Case TO-247-3 Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.45 V Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 60 A Pd - Power Dissipation 208 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series HGTG30N60B3D Brand onsemi / Fairchild
Continuous Collector Current 60 A Continuous Collector Current Ic Max 60 A
Gate-Emitter Leakage Current +/- 250 nA Height 20.82 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 450 Subcategory IGBTs
Width 4.82 mm Part # Aliases HGTG30N60B3D_NL
Unit Weight 0.225401 oz

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