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HGTG20N60B3D

General Purpose IGBT Single Transistor

Inventory:6,372

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Overview of HGTG20N60B3D

With a much lower on-state voltage drop that only varies moderately between 25°C and 150°C, the HGTG20N60B3D is a reliable and versatile choice for a wide range of applications. From AC and DC motor controls to power supplies and drivers for solenoids, relays, and contactors, this IGBT is specifically designed to meet the demands of moderate frequency operations where low conduction losses are crucial

Key Features

  • High-Speed Processing
  • Advanced Algorithm
  • Real-Time Monitoring
  • Error-Free Operation
  • Multi-Language Support

Application

  • Quality industrial drives
  • Solar panels inverters
  • Reliable power supplies

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
REACH Details Technology Si
Package / Case TO-247-3 Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.8 V Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 40 A Pd - Power Dissipation 165 W
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Series HGTG20N60B3D Brand onsemi / Fairchild
Continuous Collector Current 40 A Continuous Collector Current Ic Max 40 A
Gate-Emitter Leakage Current +/- 100 nA Height 20.82 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 450 Subcategory IGBTs
Width 4.82 mm Part # Aliases HGTG20N60B3D_NL
Unit Weight 0.225401 oz

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Warranty, Returns, and Additional Information

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