• HGTG12N60A4D TO-247-3
HGTG12N60A4D TO-247-3

HGTG12N60A4D

Low power dissipation

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Overview of HGTG12N60A4D

The HGTG12N60A4D is a 600V, 12A IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. It features low saturation voltage and fast switching characteristics, making it ideal for motor control, power supplies, and inverters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Terminal for high-power current
  • Emitter (E): Terminal for ground connection
  • Gate (G): Input terminal for controlling the IGBT
  • Emitter (E): Terminal for ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the HGTG12N60A4D IGBT for a visual representation.

Key Features

  • High Voltage and Current Ratings: With a voltage rating of 600V and a current rating of 12A, the HGTG12N60A4D is suitable for high-power applications.
  • Low Saturation Voltage: The IGBT exhibits low saturation voltage, reducing power losses during operation.
  • Fast Switching Speed: It offers fast switching characteristics, enabling efficient control of high-power circuits.
  • Temperature Stability: Designed for reliable performance across a wide temperature range, ensuring stability in various operating conditions.
  • Overcurrent Protection: The IGBT includes built-in protection features to safeguard against overcurrent conditions.

Note: For detailed technical specifications, please refer to the HGTG12N60A4D datasheet.

Application

  • Motor Control: Ideal for use in motor control applications requiring high-power switching capabilities.
  • Power Inverters: Suitable for power inverter circuits in renewable energy systems and industrial applications.
  • UPS Systems: Used in uninterruptible power supply (UPS) systems for efficient power conversion and regulation.

Functionality

The HGTG12N60A4D is an IGBT designed for high-power switching operations, offering low saturation voltage and fast switching speeds. It provides reliable and efficient performance in various power electronics applications.

Usage Guide

  • Power Supply: Connect the collector and emitter terminals to the power source to enable current flow through the IGBT.
  • Gate Control: Apply suitable control signals to the gate terminal to switch the IGBT between conduction and cutoff states.
  • Heat Dissipation: Ensure proper heat sinking to manage thermal dissipation during high-power operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the HGTG12N60A4D?
A: The HGTG12N60A4D has a maximum voltage rating of 600V, making it suitable for high-voltage applications.

Q: Does the HGTG12N60A4D require external overcurrent protection?
A: The HGTG12N60A4D features built-in overcurrent protection, but additional external protection measures may be recommended depending on the application requirements.

Equivalent

For similar functionalities, consider these alternatives to the HGTG12N60A4D:

  • FGL60N100BNTD: A 1000V, 60A IGBT offering higher voltage capabilities for industrial power applications.
  • IRG7PH46UD1PBF: This IGBT features ultra-fast switching speeds and low conduction losses, suitable for high-frequency power conversion.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 54 A
Pd - Power Dissipation 167 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG12N60A4D
Brand onsemi / Fairchild Continuous Collector Current 60 A
Continuous Collector Current Ic Max 54 A Gate-Emitter Leakage Current +/- 250 nA
Height 20.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Width 4.82 mm
Part # Aliases HGTG12N60A4D_NL Unit Weight 0.225401 oz

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