HGTG12N60A4D
Low power dissipation
Inventory:5,035
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : HGTG12N60A4D
-
Package/Case : TO-247-3
-
Brands : Onsemi
-
Components Categories : Single IGBTs
-
Datesheet : HGTG12N60A4D DataSheet (PDF)
-
Series : HGTG12N60A4D
The HGTG12N60A4D is a 600V, 12A IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. It features low saturation voltage and fast switching characteristics, making it ideal for motor control, power supplies, and inverters. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the HGTG12N60A4D IGBT for a visual representation. Note: For detailed technical specifications, please refer to the HGTG12N60A4D datasheet. Functionality The HGTG12N60A4D is an IGBT designed for high-power switching operations, offering low saturation voltage and fast switching speeds. It provides reliable and efficient performance in various power electronics applications. Usage Guide Q: What is the maximum voltage rating of the HGTG12N60A4D? Q: Does the HGTG12N60A4D require external overcurrent protection? For similar functionalities, consider these alternatives to the HGTG12N60A4D:Overview of HGTG12N60A4D
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The HGTG12N60A4D has a maximum voltage rating of 600V, making it suitable for high-voltage applications.
A: The HGTG12N60A4D features built-in overcurrent protection, but additional external protection measures may be recommended depending on the application requirements.Equivalent
![](/files/uploads/product/b/6d47987299144239a4a32c76e00415e2.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 54 A |
Pd - Power Dissipation | 167 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTG12N60A4D |
Brand | onsemi / Fairchild | Continuous Collector Current | 60 A |
Continuous Collector Current Ic Max | 54 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
Subcategory | IGBTs | Width | 4.82 mm |
Part # Aliases | HGTG12N60A4D_NL | Unit Weight | 0.225401 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![HGTG20N60A4](/files/uploads/product/s/10afb93aa26843438a11139dcdf8d265.webp)
HGTG20N60A4
Insulated Gate Bipolar Transistor, 600V, SMPS
![CM400HG-66H](/img/package/module.jpg)
CM400HG-66H
High-Power Insulated Gate Bipolar Transistor for Industrial Applications
![HGTG5N120BND](/img/package/to247.jpg)
HGTG5N120BND
N-channel 1200V Insulated Gate Bipolar Transistor (IGBT) chip with a 21A current rating, packaged in a TO-247 enclosure
![SIHG80N60E-GE3](/img/package/to247ac.jpg)
SIHG80N60E-GE3
Power MOSFET with 600V rated drain-source voltage and 30V gate-source voltage in TO-247AC package
![HGTG40N60A4](/img/package/to247.jpg)
HGTG40N60A4
3-Pin TO-247 N-Type Insulated Gate Bipolar Transistor Chip
![HGTP7N60C3D](/img/package/to220.jpg)
HGTP7N60C3D
Fairchild HGTP7N60C3D IGBT
![HGTP20N60A4](/img/package/to220.jpg)
HGTP20N60A4
Switched mode power supply IGBT with 600V rating
![HGTG12N60A4](/img/package/to247.jpg)
HGTG12N60A4
4A current handling capability
![HGTG10N120BND](/img/package/to247.jpg)
HGTG10N120BND
N-Channel Insulated Gate Bipolar Transistor (IGBT) encased in a TO-247 package, designed to handle currents of 35A and voltages up to 1200V
![HGTP7N60B3D](/img/package/to220.jpg)
HGTP7N60B3D
60W Insulated Gate Bipolar Transistors with 14A current rating and 600V voltage capability in a TO-220AB package