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HGTG11N120CN

1200V voltage rating

Quantity Unit Price(USD) Ext. Price
1 $5.949 $5.95
137 $2.375 $325.38
548 $2.294 $1,257.11
959 $2.255 $2,162.54

Inventory:6,681

*The price is for reference only.
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Overview of HGTG11N120CN

When it comes to high current handling and fast switching speeds, the HGTG11N120CN from International Rectifier is the go-to solution. This high voltage, high-speed power IGBT is engineered for efficiency and performance, with its low voltage drop, low on-state conduction losses, and advanced trench gate technology. Moreover, the inclusion of overcurrent and overtemperature protection ensures safe operation in critical applications

Key Features

  • Promotes energy efficiency and savings
  • Low power consumption ensured
  • Optimized for high-frequency operation

Application

  • Powerful motor control
  • Renewable energy solutions
  • Efficient industrial automation

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.1 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 43 A
Pd - Power Dissipation 298 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG11N120CN
Brand onsemi / Fairchild Continuous Collector Current 55 A
Continuous Collector Current Ic Max 43 A Gate-Emitter Leakage Current +/- 250 nA
Height 20.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 150
Subcategory IGBTs Width 4.82 mm
Part # Aliases HGTG11N120CN_NL Unit Weight 0.225401 oz

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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