• HGT1S20N60C3S9A D2PAK-3
HGT1S20N60C3S9A D2PAK-3

HGT1S20N60C3S9A

The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V

Quantity Unit Price(USD) Ext. Price
1 $7.051 $7.05
200 $2.729 $545.80
500 $2.633 $1,316.50
800 $2.586 $2,068.80

Inventory:6,477

*The price is for reference only.
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Overview of HGT1S20N60C3S9A

The HGT1S20N60C3S9A is a high power IGBT (Insulated Gate Bipolar Transistor) designed for use in power electronic applications. This IGBT features a high current rating and low saturation voltage, making it suitable for high-power switching and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • E: Emitter terminal
  • C: Collector terminal
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the HGT1S20N60C3S9A IGBT for a visual representation.

Key Features

  • High Power IGBT: Designed for high-power applications requiring efficient switching.
  • Low Saturation Voltage: Ensures minimal power loss during operation.
  • Fast Switching Speed: Enables quick switching transitions for improved efficiency.
  • High Current Rating: Capable of handling high currents for various industrial applications.
  • Temperature Stability: Features temperature stability for reliable operation in challenging environments.

Note: For detailed technical specifications, please refer to the HGT1S20N60C3S9A datasheet.

Application

  • Power Inverters: Ideal for use in power inverters and converters.
  • Motor Drives: Suitable for motor control applications requiring high power handling.
  • Switching Power Supplies: Used in high-power switching power supply designs.

Functionality

The HGT1S20N60C3S9A IGBT is designed to provide efficient power switching and high current handling capabilities. It offers reliable performance in demanding applications where power control is critical.

Usage Guide

  • Gate Control: Apply appropriate gate signals to control the switching operation.
  • Heat Dissipation: Ensure proper heatsinking to manage device temperature during operation.
  • Protection Circuits: Implement necessary protection circuits to safeguard the IGBT and connected components.

Frequently Asked Questions

Q: Can the HGT1S20N60C3S9A be used in high-frequency applications?
A: Yes, the HGT1S20N60C3S9A is suitable for high-frequency switching applications due to its fast switching speed.

Equivalent

For similar functionalities, consider these alternatives to the HGT1S20N60C3S9A:

  • HGT1S25N60C3S9A: A higher current rated version of the HGT1S20N60C3S9A for increased power handling capacity.
  • HGT1S15N60C3S9A: A lower current rated variant suitable for applications with lower power requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AJ
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 800
ON Target N V(BR)CES Typ (V) 600
IC Max (A) 20 VCE(sat) Typ (V) 1.4
Co-Packaged Diode No Pricing ($/Unit) Price N/A

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