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HGT1S10N120BNST

Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through

Quantity Unit Price(USD) Ext. Price
1 $2.682 $2.68
10 $2.310 $23.10
30 $2.076 $62.28
100 $1.837 $183.70
500 $1.730 $865.00
800 $1.683 $1,346.40

Inventory:8,703

*The price is for reference only.
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Overview of HGT1S10N120BNST

The HGT1S10N120BNST is a high-speed, high-power IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications, such as motor control, renewable energy systems, and industrial power supplies. This IGBT features a unique combination of high switching speed and low saturation voltage, making it suitable for high-efficiency power conversion.

Pinout

(Note: The pin configuration below is a general representation. Please refer to the specific datasheet for precise details.)

  • Collector (C): Output terminal for high-power current
  • Emitter (E): Ground terminal
  • GATE: Control terminal for turning the IGBT on and off
  • Sense: Sensing terminal for current feedback
  • Vce: Collector-Emitter Voltage terminal
  • GND: Power Ground
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and application of the HGT1S10N120BNST IGBT for a clearer understanding of its usage in power electronic circuits.

Key Features

  • High-Speed Switching: The HGT1S10N120BNST offers fast switching capabilities, enabling efficient power control in high-frequency applications.
  • Low Saturation Voltage: With a low saturation voltage, this IGBT minimizes power losses and heat dissipation during operation.
  • High Power Handling: Capable of handling high currents and voltages, making it suitable for high-power applications.
  • Temperature Stability: Designed to operate reliably across a wide temperature range, ensuring stable performance in various environments.
  • Overcurrent Protection: Includes built-in protection mechanisms to prevent damage from current surges and faults.

Note: For detailed technical specifications, please consult the HGT1S10N120BNST datasheet.

Application

  • Motor Drives: Ideal for controlling and driving motors in applications such as industrial machinery and automotive systems.
  • Power Inverters: Suitable for use in power inverters for converting DC power to AC power in renewable energy systems.
  • Switching Power Supplies: Used in high-efficiency switching power supplies for various electronic devices and equipment.

Functionality

The HGT1S10N120BNST is a high-speed, high-power IGBT that offers efficient power switching capabilities for a range of power electronic applications. It provides reliable and precise control over power flow in demanding circuit designs.

Usage Guide

  • Power Connections: Connect the Collector (C) terminal to the high-power output, Emitter (E) to ground, and GATE for controlling the IGBT switching.
  • Heat Management: Ensure proper heat sinking and cooling measures to maintain the IGBT at optimal operating temperatures.
  • Gate Control: Apply appropriate gate signals to efficiently switch the IGBT between on and off states.

Frequently Asked Questions

Q: Is the HGT1S10N120BNST suitable for high-frequency applications?
A: Yes, the high-speed switching capability of the HGT1S10N120BNST makes it ideal for high-frequency power control applications.

Equivalent

For alternatives offering similar functionalities, consider the following options:

  • HGT1S20N60A4S: A high-power IGBT with different voltage and current ratings suitable for various power electronic applications.
  • IXGN60N60C2D1: Another high-speed IGBT designed for high-power switching applications in industrial and automotive systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AJ
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 800
ON Target N V(BR)CES Typ (V) 1200
IC Max (A) 17 VCE(sat) Typ (V) 2.45
Eoff Typ (mJ) 0.8 Eon Typ (mJ) 0.32
Gate Charge Typ (nC) 100 Short Circuit Withstand (µs) 8
EAS Typ (mJ) 80 PD Max (W) 298
Co-Packaged Diode No Pricing ($/Unit) $2.0639Sample

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