HGT1S10N120BNST
Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.682 | $2.68 |
10 | $2.310 | $23.10 |
30 | $2.076 | $62.28 |
100 | $1.837 | $183.70 |
500 | $1.730 | $865.00 |
800 | $1.683 | $1,346.40 |
Inventory:8,703
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Part Number : HGT1S10N120BNST
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Package/Case : D2PAK-3
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Brands : Onsemi
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Components Categories : Single IGBTs
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Datesheet : HGT1S10N120BNST DataSheet (PDF)
The HGT1S10N120BNST is a high-speed, high-power IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications, such as motor control, renewable energy systems, and industrial power supplies. This IGBT features a unique combination of high switching speed and low saturation voltage, making it suitable for high-efficiency power conversion. (Note: The pin configuration below is a general representation. Please refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and application of the HGT1S10N120BNST IGBT for a clearer understanding of its usage in power electronic circuits. Note: For detailed technical specifications, please consult the HGT1S10N120BNST datasheet. Functionality The HGT1S10N120BNST is a high-speed, high-power IGBT that offers efficient power switching capabilities for a range of power electronic applications. It provides reliable and precise control over power flow in demanding circuit designs. Usage Guide Q: Is the HGT1S10N120BNST suitable for high-frequency applications? For alternatives offering similar functionalities, consider the following options:Overview of HGT1S10N120BNST
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the high-speed switching capability of the HGT1S10N120BNST makes it ideal for high-frequency power control applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418AJ |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 800 |
ON Target | N | V(BR)CES Typ (V) | 1200 |
IC Max (A) | 17 | VCE(sat) Typ (V) | 2.45 |
Eoff Typ (mJ) | 0.8 | Eon Typ (mJ) | 0.32 |
Gate Charge Typ (nC) | 100 | Short Circuit Withstand (µs) | 8 |
EAS Typ (mJ) | 80 | PD Max (W) | 298 |
Co-Packaged Diode | No | Pricing ($/Unit) | $2.0639Sample |
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