FQB5N90TM
3 ohm resistance, housed in a D2PAK package
Inventory:6,176
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FQB5N90TM
-
Package/Case : D2PAK-3
-
Brand : Onsemi
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : FQB5N90TM DataSheet (PDF)
The FQB5N90TM is a power MOSFET transistor designed for high-performance switching applications.This N-channel MOSFET features a voltage rating of 900V and a continuous drain current of 4.5A,making it suitable for power supply and motor control circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Illustrate a circuit diagram showing the connections and usage of the FQB5N90TM MOSFET for a better understanding of its operation. Note:For detailed technical specifications,please refer to the FQB5N90TM datasheet. Functionality The FQB5N90TM MOSFET is designed to provide high-performance switching capabilities for power electronics applications.Its voltage rating and current handling make it versatile for a wide range of circuit designs. Usage Guide Q:What is the maximum voltage rating of the FQB5N90TM? Q:Can the FQB5N90TM be used for high-current applications? For similar functionalities,consider these alternatives to the FQB5N90TM:Overview of FQB5N90TM
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:The FQB5N90TM has a maximum voltage rating of 900V,making it suitable for high-voltage applications.
A:Yes,the FQB5N90TM has a continuous drain current rating of 4.5A,making it suitable for moderate to high-current applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418AJ |
MSL Type | 1 | MSL Temp (°C) | 245 |
Container Type | REEL | Container Qty. | 800 |
ON Target | Y | Channel Polarity | N-Channel |
Configuration | Single | V(BR)DSS Min (V) | 900 |
VGS Max (V) | ±30 | VGS(th) Max (V) | 5 |
ID Max (A) | 5.4 | PD Max (W) | 158 |
RDS(on) Max @ VGS = 10 V (mΩ) | 2300 | Qg Typ @ VGS = 10 V (nC) | 31 |
Ciss Typ (pF) | 1200 | Pricing ($/Unit) | $1.2585Sample |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
FQT7N10LTF
N-Channel Surface Mount Mosfet with 100V Voltage Rating and 0.35 Ohm Resistance
FQPF14N30
FQPF14N30 MOSFET: N-Channel QFET, 300V
FQD30N06L
Power Field-Effect Transistor with 24A I(D) and 60V
BFQ19SH6327XTSA1
Infineon BFQ19SH6327XTSA1 NPN Transistor
FQA24N50
MOSFET 500V N-Channel QFET
FQA28N50
N-channel transistor for high power applications with a maximum voltage of 500V and current handling of 28.4A
FQA55N25
MOSFETN250V55ATO-3P(N)
FQB25N33
ROHS COMPLIANT 330V N-Channel Silicon Metal-oxide Semiconductor FET, with 25A I(D), 0.23ohm, packaged in D2PAK with 8 pins
FQB55N10
QF 100V 26MOHM D2PAK MOSFET
FQB1P50
This Power MOSFET is designed for P-Channel operation with QFET technology
MTB75N05HD
75A 50V SMT N-channel MOSFET, known as MTB75N05HD
TK8S06K3L(T6L1,NQ)
Automotive Grade N-Channel Silicon Transistor, 60V, 8A
IXFH320N10T2
Product IXFH320N10T2 is a N Channel MOSFET with a voltage rating of 100V and a current rating of 320A
DTC114ESA-TP
Bipolar Transistors - Pre-Biased
2N5157
Bipolar Transistors - BJT Power BJT
IRLL2703PBF
Field-effect transistor for small signals
IRF520NSTRLPBF
This product is an N-channel MOSFET rated for 100 volts and 9.7 amps, housed in a D2PAK package and shipped in tape and reel packaging
MMUN2113LT1G
PNP Bipolar Transistor with BRT Technology
FJN3303RTA
Si NPN transistor with biasing for simplified application
NVR1P02T1G
-20V, -1A P-channel Power MOSFET with a low on-resistance of 180mΩ