BFQ19SH6327XTSA1
Infineon BFQ19SH6327XTSA1 NPN Transistor
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Part Number : BFQ19SH6327XTSA1
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Package/Case : TO-243AA
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Brand : Infineon Technologies
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Components Classification : Bipolar RF Transistors
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Datesheet : BFQ19SH6327XTSA1 DataSheet (PDF)
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Series : BFQ19S
Overview of BFQ19SH6327XTSA1
With a collector-emitter voltage of 15V and a transition frequency of 5.5GHz, the BFQ19SH6327XTSA1 RF transistor is a versatile NPN component suitable for various RF applications. Its power dissipation rating of 1W ensures optimal performance, while the DC collector current of 120mA and DC current gain of 70hFE allow for efficient signal amplification. Designed for high-frequency operation, this transistor is an excellent choice for use in RF amplifiers, mixers, and other communication systems where reliability and performance are key
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Status | Active | Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V | Frequency - Transition | 5.5GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 1.8GHz | Gain | 7dB |
| Power - Max | 1W | DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 70mA, 8V |
| Current - Collector (Ic) (Max) | 120mA | Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | TO-243AA |
| Supplier Device Package | PG-SOT89 | Base Product Number | BFQ19 |
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