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IXFH320N10T2

Product IXFH320N10T2 is a N Channel MOSFET with a voltage rating of 100V and a current rating of 320A

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Overview of IXFH320N10T2

The IXFH320N10T2 is a high power MOSFET transistor with a maximum voltage rating of 100V and a continuous drain current of 320A. It is designed for applications requiring high power switching and efficient operation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH320N10T2 MOSFET for a visual representation.

Key Features

  • High Power Rating: The IXFH320N10T2 can handle high power levels with its 320A continuous drain current.
  • High Voltage Rating: With a maximum voltage of 100V, this MOSFET is suitable for high voltage applications.
  • Efficient Switching: The IXFH320N10T2 offers efficient switching characteristics for improved performance.
  • Low RDS(on): Features low on-state resistance for reduced power dissipation and heat generation.
  • Robust Construction: Designed for reliability and durability in demanding applications.

Note: For detailed technical specifications, please refer to the IXFH320N10T2 datasheet.

Application

  • Power Electronics: Ideal for high power switching applications in power supplies, motor control, and inverters.
  • Renewable Energy Systems: Suitable for use in solar inverters, wind turbine systems, and other renewable energy applications.
  • Industrial Automation: Used in industrial automation equipment for efficient power management and control.

Functionality

The IXFH320N10T2 MOSFET is a high power transistor designed for efficient power switching and control in various applications requiring high current and voltage handling capabilities.

Usage Guide

  • Gate Control: Apply appropriate gate voltages to control the switching behavior of the MOSFET.
  • Drain-Source Connection: Connect the load or circuit to the drain and source pins for power switching.
  • Heat Dissipation: Ensure proper heat sinking to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFH320N10T2?
A: The IXFH320N10T2 has a maximum voltage rating of 100V.

Q: What is the continuous drain current of the IXFH320N10T2?
A: The IXFH320N10T2 features a continuous drain current of 320A.

Equivalent

For similar functionalities, consider these alternatives to the IXFH320N10T2:

  • IRF3205: A power MOSFET with comparable specifications and performance characteristics.
  • FDP8870: This MOSFET offers similar power handling capabilities and voltage ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 320 A Rds On - Drain-Source Resistance 3.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 430 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 1 kW
Channel Mode Enhancement Tradename HiPerFET
Series IXFH320N10 Brand IXYS
Configuration Single Fall Time 177 ns
Forward Transconductance - Min 130 S Product MOSFETs
Product Type MOSFET Rise Time 46 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 73 ns
Typical Turn-On Delay Time 36 ns Unit Weight 0.211644 oz

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