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NVR1P02T1G

-20V, -1A P-channel Power MOSFET with a low on-resistance of 180mΩ

Inventory:6,016

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Overview of NVR1P02T1G

The NVR1P02T1G is an N-channel MOSFET transistor designed for high-speed switching applications.It features a low on-resistance and fast switching speed,making it suitable for power management and amplification circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • VSS:Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NVR1P02T1G for a visual representation.

Key Features

  • High-Speed Switching:The NVR1P02T1G offers fast switching speeds,ideal for high-frequency applications.
  • Low On-Resistance:With its low on-resistance,this MOSFET minimizes power loss and heat generation during operation.
  • High Efficiency:This transistor provides high efficiency in power management circuits,contributing to energy-saving applications.
  • Compact Package:Available in a compact and space-saving package for easy integration into circuit designs.

Note:For detailed technical specifications,please refer to the NVR1P02T1G datasheet.

Application

  • Switching Circuits:Suitable for use in high-speed switching circuits such as DC-DC converters and motor control.
  • Power Management:Ideal for power management applications requiring efficient and reliable switching performance.
  • Amplification:Can be used for signal amplification in audio amplifiers and other amplification circuits.

Functionality

The NVR1P02T1G is an N-channel MOSFET transistor designed for high-speed switching operations.It provides reliable and efficient performance in various electronic circuits requiring fast switching characteristics.

Usage Guide

  • Gate Connection:Connect the Gate (G) pin to the controlling signal source for switching control.
  • Drain and Source Connections:Connect the Drain (D) and Source (S) pins accordingly in the circuit layout.
  • Ground Connection:Connect the VSS pin to the ground reference of the system.

Frequently Asked Questions

Q:Can the NVR1P02T1G handle high power levels?
A:Yes,the low on-resistance of the NVR1P02T1G allows it to handle high power levels efficiently.

Equivalent

For similar functionalities,consider these alternatives to the NVR1P02T1G:

  • NTD70N02R-1G:A comparable N-channel MOSFET transistor with similar performance characteristics.
  • AON6220:A high-speed N-channel MOSFET suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) -20
VGS Max (V) 20 VGS(th) Max (V) -2.3
ID Max (A) 1 PD Max (W) 0.4
RDS(on) Max @ VGS = 4.5 V (mΩ) 280 RDS(on) Max @ VGS = 10 V (mΩ) 180
Qg Typ @ VGS = 4.5 V (nC) 2.4 Qg Typ @ VGS = 10 V (nC) 2.5
Ciss Typ (pF) 165 Pricing ($/Unit) $0.1609

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