• packageimg
packageimg

CM75DU-24H

N-Channel 1200V 75A 600W

Inventory:7,518

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for CM75DU-24H using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of CM75DU-24H

Mitsubishi Electric's CM75DU-24H power module is a state-of-the-art component that harnesses the latest technology in insulated-gate bipolar transistors (IGBT). Designed for high-power applications, this module features a voltage rating of 1200V and a current rating of 75A, making it well-suited for motor drives, power supplies, and renewable energy systems. The module's low on-state voltage drop of 2.6V at 75A ensures minimal power losses and enhances overall system efficiency. Its compact and lightweight construction, measuring just 62mm x 140mm x 30mm and weighing a mere 430g, allows for seamless integration into diverse systems without compromising space or adding significant weight. Furthermore, the CM75DU-24H is equipped with essential protection features such as short-circuit and overcurrent protection, guaranteeing the safety and reliability of the system. The high thermal conductivity baseplate facilitates efficient heat dissipation, maintaining the module's operation at optimal temperatures. In conclusion, the CM75DU-24H power module is a dependable and efficient solution for high-power applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series IGBTMOD™ Package Bulk
Product Status Obsolete Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 75 A
Power - Max 600 W Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 75A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 11 nF @ 10 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

MMFTN123

MMFTN123

Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
SQD50P06-15L_GE3

SQD50P06-15L_GE3

SQD50P06-15L_GE3 is an automotive-grade P-Channel MOSFET designed to operate at high temperatures
MMST3904-7-F

MMST3904-7-F

Surface Mount NPN Bipolar Transistor, 40 Volts, 200 Milliamps, 200 Milliwatts, SOT-323 Package, Tape and Reel
SI1967DH-T1-GE3

SI1967DH-T1-GE3

MOSFET with -20V maximum drain-source voltage and 8V gate-source voltage in SC70-6 package
DMPH6050SFGQ-7

DMPH6050SFGQ-7

MOSFET with a breakdown voltage (BVDSS) ranging from 41V to 60V
SG2803J-883B

SG2803J-883B

Trans Darlington NPN 50V 0.5A 18-Pin CDIP Tube
2N7002BKS,115

2N7002BKS,115

95 mW power dissipation
FQPF3N60

FQPF3N60

N-CHANNEL Silicon Power MOSFET with 2A current rating and 600V voltage rating
DMG1013UWQ-7

DMG1013UWQ-7

MOSFET MOSFET BVDSS:
AONS66811

AONS66811

N-Channel AlphaSGT2 with 80V rating