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SI1967DH-T1-GE3

MOSFET with -20V maximum drain-source voltage and 8V gate-source voltage in SC70-6 package

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Overview of SI1967DH-T1-GE3

The SI1967DH-T1-GE3 is a MOSFET transistor designed for high-speed switching applications. It features a low on-state resistance and fast switching speeds, making it ideal for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for control input
  • D: Drain terminal for output connection
  • S: Source terminal connected to ground

Circuit Diagram

Include a circuit diagram depicting the connections and operation of the SI1967DH-T1-GE3 MOSFET for better understanding.

Key Features

  • Low On-State Resistance: Enables efficient power switching with minimal loss.
  • Fast Switching Speeds: Facilitates rapid switching transitions for high-speed applications.
  • High Power Dissipation: Capable of handling significant power levels for robust performance.
  • Enhanced Thermal Management: Designed for effective heat dissipation to maintain optimal operating temperatures.
  • Low Gate Threshold Voltage: Allows for easy control in low-voltage systems.

Note: For detailed technical specifications, please consult the SI1967DH-T1-GE3 datasheet.

Application

  • Power Management Systems: Suitable for use in power supply units and voltage regulation circuits.
  • Motor Control: Ideal for controlling the speed and direction of motors in various electronic devices.
  • Inverter Circuits: Used in inverter applications for converting DC power to AC power efficiently.

Functionality

The SI1967DH-T1-GE3 MOSFET transistor is designed to provide efficient and reliable switching capabilities for power management and motor control applications.

Usage Guide

  • Gate Connection: Connect the control signal to the G (Gate) terminal for switching operations.
  • Drain Connection: Connect the load to the D (Drain) terminal for power output.
  • Source Connection: Ground the S (Source) terminal for proper functioning.

Frequently Asked Questions

Q: Is the SI1967DH-T1-GE3 suitable for high-frequency applications?
A: Yes, the fast switching speeds of the SI1967DH-T1-GE3 make it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the SI1967DH-T1-GE3:

  • SI2319DS-T1-GE3: A MOSFET transistor with comparable performance characteristics for power management applications.
  • FDS8884: This is a power MOSFET with specifications similar to the SI1967DH-T1-GE3, offering alternative design options.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.3 A Rds On - Drain-Source Resistance 490 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI1 Brand Vishay Semiconductors
Configuration Dual Fall Time 10 ns
Height 1 mm Length 2.1 mm
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 P-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 12 ns Width 1.25 mm
Part # Aliases SI1967DH-T1-BE3 SI1903DL-T1-GE3 Unit Weight 0.000265 oz

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