SI1967DH-T1-GE3
MOSFET with -20V maximum drain-source voltage and 8V gate-source voltage in SC70-6 package
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Part Number : SI1967DH-T1-GE3
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Package/Case : SOT23-70
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Brand : Siliconix
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Components Classification : FET, MOSFET Arrays
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Datesheet : SI1967DH-T1-GE3 DataSheet (PDF)
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Series : SI1967DH
The SI1967DH-T1-GE3 is a MOSFET transistor designed for high-speed switching applications. It features a low on-state resistance and fast switching speeds, making it ideal for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram depicting the connections and operation of the SI1967DH-T1-GE3 MOSFET for better understanding. Note: For detailed technical specifications, please consult the SI1967DH-T1-GE3 datasheet. Functionality The SI1967DH-T1-GE3 MOSFET transistor is designed to provide efficient and reliable switching capabilities for power management and motor control applications. Usage Guide Q: Is the SI1967DH-T1-GE3 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the SI1967DH-T1-GE3:Overview of SI1967DH-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the fast switching speeds of the SI1967DH-T1-GE3 make it suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-363-6 | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1.3 A | Rds On - Drain-Source Resistance | 490 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 4 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI1 | Brand | Vishay Semiconductors |
Configuration | Dual | Fall Time | 10 ns |
Height | 1 mm | Length | 2.1 mm |
Product Type | MOSFET | Rise Time | 27 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 12 ns | Width | 1.25 mm |
Part # Aliases | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | Unit Weight | 0.000265 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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