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BSC094N06LS5ATMA1

Transistor MOSFET N-channel with 60V, 8-pin TDSON EP packaging

Inventory:5,108

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Overview of BSC094N06LS5ATMA1

Infineon's BSC094N06LS5ATMA1 MOSFET transistor is a versatile and efficient component for high-power electronic applications. Its N-channel design and maximum drain source voltage of 60V allow for reliable performance, with a continuous drain current of 47A ensuring stability under heavy loads. The surface mount mounting simplifies integration into existing circuit designs, while its low on-state resistance optimizes power efficiency. With a maximum threshold voltage of 1.7V, precise control over its operation is guaranteed. Additionally, the BSC094N06LS5ATMA1 is RoHS compliant, meeting environmental standards for safety and sustainability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 47 A
Rds On - Drain-Source Resistance 9.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.1 V Qg - Gate Charge 7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 36 W Channel Mode Enhancement
Tradename OptiMOS Series OptiMOS 5
Brand Infineon Technologies Configuration Single
Fall Time 3 ns Forward Transconductance - Min 22 S
Product Type MOSFET Rise Time 3 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 4 ns Part # Aliases BSC094N06LS5 SP001458086
Unit Weight 0.003683 oz

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