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BSC014N04LSATMA1

MOSFET N-channel 40V 100A TDSON-8 FL OptiMOS

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Overview of BSC014N04LSATMA1

The BSC014N04LSATMA1 is an N-channel power MOSFET designed for high-efficiency power management applications. It features a low on-state resistance and high thermal conductivity, making it suitable for power conversion and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for control
  • D: Drain terminal for output
  • S: Source terminal for input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC014N04LSATMA1 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The BSC014N04LSATMA1 offers a low RDS(on) for efficient power management.
  • High Thermal Conductivity: This MOSFET is designed for enhanced thermal dissipation, ensuring reliable operation under high power conditions.
  • Fast Switching Speed: With rapid switching capabilities, this MOSFET is suitable for applications requiring quick response times.
  • High Power Handling: The BSC014N04LSATMA1 can handle high power levels, making it ideal for power amplification and conversion.
  • Robust Construction: Designed for durability and long-term performance in demanding environments.

Note: For detailed technical specifications, please refer to the BSC014N04LSATMA1 datasheet.

Application

  • Power Management Systems: Ideal for use in power supplies, motor control, and voltage regulation circuits.
  • Audio Amplification: Suitable for audio amplifiers and high-power audio systems requiring efficient power handling.
  • Switching Circuits: Used in switching applications for controlling high currents with low losses.

Functionality

The BSC014N04LSATMA1 MOSFET is designed to control and amplify power efficiently in various electronic applications, providing high performance and reliability.

Usage Guide

  • Gate Connection: Connect the control signal to the G (Gate) terminal for switching the MOSFET.
  • Load Connection: Attach the load to the D (Drain) and S (Source) terminals for power transfer.
  • Heat Dissipation: Ensure proper heat sinking to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: Is the BSC014N04LSATMA1 suitable for high-frequency switching applications?
A: Yes, this MOSFET offers fast switching speeds and is suitable for high-frequency switching operations.

Equivalent

For similar power MOSFET options, consider these alternatives to the BSC014N04LSATMA1:

  • IRF3205: A widely used power MOSFET with similar characteristics for power management applications.
  • FDP8878: This MOSFET provides high efficiency and power handling capabilities suitable for various electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing SuperSO8 msl 1
halogenFree yes customerInfo STANDARD
fgr R10 productClassification COM
productStatusInfo active and preferred hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000871196
fourBlockPackageName PG-TDSON-8-7 rohsCompliant yes
opn BSC014N04LSATMA1 completelyPbFree no
sapMatnrSali SP000871196

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