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IRF9530NSPBF

100V 14A Transistor

Inventory:6,356

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Overview of IRF9530NSPBF

The IRF9530NSPBF is a P-channel power MOSFET transistor designed for high-power applications. It features a low on-state resistance and high current capability, making it suitable for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF9530NSPBF MOSFET for a visual representation.

Key Features

  • High Power Handling Capability: The IRF9530NSPBF can handle high power levels, making it suitable for power electronics applications.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power loss and heat generation.
  • Fast Switching Speed: Features fast switching characteristics for efficient power management.
  • High Current Rating: Capable of handling high continuous drain currents for demanding applications.
  • Robust Construction: Designed to withstand high voltages and currents without compromising performance.

Note: For detailed technical specifications, please refer to the IRF9530NSPBF datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for voltage regulation and current control.
  • Motor Control: Suitable for motor drive applications requiring high current handling capabilities.
  • Inverter Systems: Used in inverter systems for DC to AC conversion in renewable energy and industrial applications.

Functionality

The IRF9530NSPBF P-channel MOSFET transistor is utilized for high-power switching applications where low on-state resistance and high current handling are crucial for efficient power management.

Usage Guide

  • Gate Control: Apply appropriate gate voltages to control the switching behavior of the MOSFET.
  • Drain-Source Connection: Connect the load between the drain and source terminals to control current flow.
  • Heat Management: Ensure proper heat sinking to dissipate heat generated during operation.

Frequently Asked Questions

Q: What is the maximum drain current rating of the IRF9530NSPBF?
A: The IRF9530NSPBF can handle a maximum continuous drain current of X amperes.

Q: Is the IRF9530NSPBF suitable for high-frequency switching applications?
A: Yes, the IRF9530NSPBF offers fast switching speed, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF9530NSPBF:

  • IRF9520NSPBF: An N-channel power MOSFET with comparable specifications suitable for complementary applications.
  • IRF540NSPBF: This power MOSFET offers higher current handling capabilities while maintaining efficiency in power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 14 A Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 38.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 3.8 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 46 ns Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 58 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 15 ns Width 6.22 mm
Part # Aliases SP001555856 Unit Weight 0.011640 oz

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