IRF9530NSPBF
100V 14A Transistor
Inventory:6,356
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Part Number : IRF9530NSPBF
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Package/Case : TO-252-3
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Brands : Infineon
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRF9530NSPBF DataSheet (PDF)
The IRF9530NSPBF is a P-channel power MOSFET transistor designed for high-power applications. It features a low on-state resistance and high current capability, making it suitable for power management in various electronic systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF9530NSPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF9530NSPBF datasheet. Functionality The IRF9530NSPBF P-channel MOSFET transistor is utilized for high-power switching applications where low on-state resistance and high current handling are crucial for efficient power management. Usage Guide Q: What is the maximum drain current rating of the IRF9530NSPBF? Q: Is the IRF9530NSPBF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IRF9530NSPBF:Overview of IRF9530NSPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF9530NSPBF can handle a maximum continuous drain current of X amperes.
A: Yes, the IRF9530NSPBF offers fast switching speed, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 14 A | Rds On - Drain-Source Resistance | 200 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 38.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 3.8 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 46 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 58 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 15 ns | Width | 6.22 mm |
Part # Aliases | SP001555856 | Unit Weight | 0.011640 oz |
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