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BSC014N06NSTATMA1

BSC014N06NSTATMA1 is a 60V, 257A, 1.45mohm OptiMOS Power-Transistor with N-Channel characteristics and TDSON-8 FL packaging

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Overview of BSC014N06NSTATMA1

The BSC014N06NSTATMA1, a N-channel Power MOSFET manufactured by Infineon Technologies, is designed to meet the needs of power applications with high power density requirements. This MOSFET features a low on-state resistance of 14 mΩ, enabling efficient power flow with minimal losses, making it well-suited for motor control, DC-DC conversion, and power supplies. With a high current rating of 180A, it has the capability to handle high power loads, while its low gate charge and fast switching speeds ensure high performance in demanding applications. Packaged in a TO-220 package, this MOSFET provides good thermal dissipation properties, ensuring reliable operation even in high-temperature environments. Moreover, the BSC014N06NSTATMA1 is RoHS compliant, meeting environmental standards for safe use

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.45 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V Qg - Gate Charge 89 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 156 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 11 ns Forward Transconductance - Min 75 S
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 43 ns
Typical Turn-On Delay Time 23 ns Part # Aliases BSC014N06NST SP001657072
Unit Weight 0.003683 oz

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