BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
Inventory:9,751
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSC011N03LSATMA1
-
Package/Case : TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : BSC011N03LSATMA1 DataSheet (PDF)
-
Series : BSC011N03LS
Overview of BSC011N03LSATMA1
The BSC011N03LSATMA1 MOSFET is a high-performance N-channel transistor designed for automotive applications. With a drain source voltage (Vds) of 30V and a continuous drain current (Id) of 100A, this MOSFET is capable of handling high-power requirements. It features a low on-resistance (Rds(on)) of 900µohm and a threshold voltage (Vgs) of 2V, making it suitable for a wide range of automotive power management applications. The TDSON-8 case style and 8 pins provide easy installation and secure connections, while the maximum operating temperature of 150°C ensures reliable performance in harsh automotive environments. With a power dissipation (Pd) of 96W, this MOSFET is designed to handle demanding automotive power applications with ease. Its MSL 1 - Unlimited rating and compliance with no SVHC (27-Jun-2018) regulations make it a reliable and environmentally friendly choice for automotive engineers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDSON-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 230 A |
Rds On - Drain-Source Resistance | 1.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 72 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 96 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 6.2 ns |
Forward Transconductance - Min | 85 S | Height | 1.27 mm |
Length | 5.9 mm | Product Type | MOSFET |
Rise Time | 8.8 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 37 ns | Typical Turn-On Delay Time | 6.7 ns |
Width | 5.15 mm | Part # Aliases | BSC011N03LS SP000799082 |
Unit Weight | 0.003880 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BSC026N08NS5ATMA1](/files/uploads/product/s/3cf851fedebc4ef6bf6015e5375f7e4a.webp)
BSC026N08NS5ATMA1
Part number BSC026N08NS5ATMA1
![BSC110N15NS5ATMA1](/files/uploads/product/s/da978243cce743119a99457f6c4c8335.webp)
BSC110N15NS5ATMA1
TDSON-8 MOSFET, N-type, 150V, 76A, with low on-resistance
![BSS138NH6327](/files/uploads/product/s/aa8ffea6-f89d-4aa2-a853-08dbbf1058dd.webp)
BSS138NH6327
Reel Packed for Automated Assembly
![BSC040N10NS5](/files/uploads/product/s/ce1d41c3-98bc-40c9-65dc-08dbbf1058dd.webp)
BSC040N10NS5
High-Frequency Operation and Low Vibration Tolerance Enable
![BSC010NE2LS](/files/uploads/product/s/BSC010NE2LS-22111036.webp)
BSC010NE2LS
High power 8-pin TDSON EP package MOSFET
![BSZ0902NSIATMA1](/files/uploads/product/s/6bb0f738afc64809a1674fcf1edf74bf.webp)
BSZ0902NSIATMA1
ROHS-compliant 30V N-Channel MOSFET with low on-resistance
![BSC007N04LS6ATMA1](/img/package/son8.jpg)
BSC007N04LS6ATMA1
INFINEON - BSC007N04LS6ATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 620 µohm, TDSON, Surface Mount
![BSC009NE2LS5IATMA1](/img/package/son8.jpg)
BSC009NE2LS5IATMA1
8-pin TDSON EP package type for easy installation
![BSC014N04LSATMA1](/img/package/son8.jpg)
BSC014N04LSATMA1
MOSFET N-channel 40V 100A TDSON-8 FL OptiMOS
![BSC014N06NSTATMA1](/img/package/son8.jpg)
BSC014N06NSTATMA1
BSC014N06NSTATMA1 is a 60V, 257A, 1.45mohm OptiMOS Power-Transistor with N-Channel characteristics and TDSON-8 FL packaging
![DTA043EEBTL](/img/package/mt200.jpg)
DTA043EEBTL
The description for DTA043EEBTL indicates it is a component rated at -0.1A and housed in an SOT-416FL casing
![NVTFS4C13NTAG](/img/package/dfn8.jpg)
NVTFS4C13NTAG
Transistor MOSFET N-channel with 30V voltage and 14A current in 8-pin WDFN package, on tape and reel
![NTGS5120PT1G](/img/package/tsop6.jpg)
NTGS5120PT1G
This product NTGS5120PT1G consists of SOT-23-6 MOSFETs with RoHS compliance
![STF25NM60N](/img/package/to220.jpg)
STF25NM60N
Features 3 pins with a tab for secure connection in circuit applications
![C3M0280090J](/img/package/to263.jpg)
C3M0280090J
MOSFET G3 made of silicon carbide with a low on-state resistance of 280 milliohms and a voltage rating of 900V
![APT50GT60BRDQ2G](/img/package/to247.jpg)
APT50GT60BRDQ2G
Inquire for more information
![MS2473](/img/product.png)
MS2473
High-power transistor for RF amplificatio
![AOD2916](/img/package/to252.jpg)
AOD2916
Product AOD2916 is an N-channel MOSFET with a voltage rating of 100V and a low on-resistance of 34mΩ at a current of 10A
![IRFI1310NPBF](/img/package/to220.jpg)
IRFI1310NPBF
Full-Pak configuration
![NVD5117PLT4G](/img/package/dpak.jpg)
NVD5117PLT4G
P-Channel 60V 11A Automotive MOSFET, AEC-Q101 Certified, DPAK Package, Tape and Reel