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NTGS5120PT1G

This product NTGS5120PT1G consists of SOT-23-6 MOSFETs with RoHS compliance

Quantity Unit Price(USD) Ext. Price
1 $0.138 $0.14
10 $0.119 $1.19
30 $0.112 $3.36
100 $0.103 $10.30
500 $0.098 $49.00
1000 $0.096 $96.00

Inventory:6,370

*The price is for reference only.
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Overview of NTGS5120PT1G

The NTGS5120PT1G is an N-channel logic level enhancement mode field-effect transistor (FET) designed for use in various electronic applications. It features a high saturation current and low gate threshold voltage, making it suitable for switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTGS5120PT1G for a visual representation.

Key Features

  • Logic Level FET: N-channel FET suitable for logic level applications.
  • High Saturation Current: Capable of handling high currents in the ON state.
  • Low Gate Threshold Voltage: Operates at low voltage levels for easy gate control.
  • Fast Switching Speed: Provides quick response times for switching operations.
  • Enhancement Mode: Utilizes enhancement mode for improved performance in various circuits.

Note: For detailed technical specifications, please refer to the NTGS5120PT1G datasheet.

Application

  • Switching Circuits: Ideal for use in electronic switching circuits.
  • Amplification: Can be used for signal amplification in electronic devices.
  • Logic Level Conversion: Suitable for logic level conversion applications.

Functionality

The NTGS5120PT1G is an N-channel FET that functions as a logic level enhancement mode transistor, providing a reliable solution for various electronic tasks requiring efficient switching and amplification capabilities.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate (G) pin for ON/OFF control.
  • Drain-Source Connection: Connect the load between the Drain (D) and Source (S) pins.
  • Operating Voltage: Operate within the specified voltage range for optimal performance.

Frequently Asked Questions

Q: Is the NTGS5120PT1G suitable for high-frequency applications?
A: Yes, the NTGS5120PT1G offers fast switching speed, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the NTGS5120PT1G:

  • NTGS5121PT1G: A similar N-channel FET with slightly different specifications but comparable performance.
  • NTMS4178PT1G: This N-channel FET offers similar characteristics and can be used as an alternative to the NTGS5120PT1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type TSOP-6 Case Outline 318G-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) -60
VGS Max (V) 20 VGS(th) Max (V) 3
ID Max (A) 2.5 PD Max (W) 1.1
RDS(on) Max @ VGS = 4.5 V (mΩ) 142 RDS(on) Max @ VGS = 10 V (mΩ) 111
Qg Typ @ VGS = 4.5 V (nC) 4 Qg Typ @ VGS = 10 V (nC) 18.1
Ciss Typ (pF) 942 Pricing ($/Unit) $0.1481Sample

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