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BSC010NE2LSATMA1

BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V

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Overview of BSC010NE2LSATMA1

The BSC010NE2LSATMA1 is a Power MOSFET transistor designed for use in electronic power applications.This MOSFET offers high efficiency and low on-resistance,making it suitable for power management and switching circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • GND:Ground Connection
  • VCC:Positive Power Supply
  • NC:No Connection
  • NC:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC010NE2LSATMA1 MOSFET for a visual representation.

Key Features

  • High Efficiency: The BSC010NE2LSATMA1 offers high efficiency in power management applications, reducing energy loss and heat generation.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power losses and voltage drops during operation.
  • Fast Switching Speed: The BSC010NE2LSATMA1 has fast switching speeds, making it ideal for applications requiring rapid switching operations.
  • Low Gate Threshold Voltage: The low gate threshold voltage allows for efficient control of the MOSFET switching behavior.
  • Overcurrent Protection: This MOSFET includes overcurrent protection features to prevent damage under high load conditions.

Note: For detailed technical specifications, please refer to the BSC010NE2LSATMA1 datasheet.

Application

  • Power Management: Ideal for power management systems in various electronic devices and equipment.
  • Switching Circuits: Suitable for use in switching circuits to control power flow and switching operations.
  • Motor Control: Used in motor control applications for efficient power handling and control.

Functionality

The BSC010NE2LSATMA1 MOSFET provides efficient power switching capabilities for electronic circuits, offering high performance and reliability in power management applications.

Usage Guide

  • Power Supply: Connect the Drain (D) and Source (S) pins to the power supply voltage for proper operation.
  • Gate Control: Apply appropriate voltage levels to the Gate (G) pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load to the Drain (D) pin for power delivery through the MOSFET.

Frequently Asked Questions

Q: Is the BSC010NE2LSATMA1 suitable for high-speed switching applications?
A: Yes, the BSC010NE2LSATMA1 offers fast switching speeds, making it suitable for high-speed switching applications.

Equivalent

For similar functionalities, consider these alternatives to the BSC010NE2LSATMA1:

  • IRF3205: A power MOSFET with comparable performance characteristics for power switching applications.
  • SPP08N80C3: This MOSFET transistor offers similar power handling capabilities with a different package and specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing SuperSO8 5x6 msl 1
halogenFree yes customerInfo STANDARD
fgr 015 productClassification COM
productStatusInfo active and preferred hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000776124
fourBlockPackageName PG-TDSON-8-1 rohsCompliant yes
opn BSC010NE2LSATMA1 completelyPbFree no
sapMatnrSali SP000776124

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