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ZVN4424A

N-channel MOSFET,ZVN4424A 0.26A 240V

Inventory:6,908

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Overview of ZVN4424A

MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:570mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260mA; Current Temperature:25°C; Device Marking:ZVN4424A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:570mW; Power Dissipation Pd:570mW; Power Dissipation Ptot Max:750mW; Pulse Current Idm:1A; Termination Type:Through Hole; Voltage Vds Typ:240V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:1.8V

Key Features

  • BVDSS> 240V
  • RDS(ON) ≤ 6Ω @ VGS = 2.5V
  • ID = 260mA Maximum Continuous Drain Current
  • Fast Switching Speed
  • Low Threshold
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Application

SWITCHING
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-92-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 240 V Id - Continuous Drain Current 260 mA
Rds On - Drain-Source Resistance 5.5 Ohms Vgs - Gate-Source Voltage - 40 V, + 40 V
Vgs th - Gate-Source Threshold Voltage 800 mV Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
Channel Mode Enhancement Series ZVN4424
Brand Diodes Incorporated Configuration Single
Fall Time 16 ns Forward Transconductance - Min 0.4 S
Height 4.01 mm Length 4.77 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 5 ns Factory Pack Quantity 4000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 2.5 ns Width 2.41 mm
Unit Weight 0.016000 oz

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