ZVN2106A
channel MOSFET with a voltage rating of 60V, current rating of 0.45A, and power dissipation of 0.7W, packaged in TO92
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.443 | $0.44 |
10 | $0.356 | $3.56 |
30 | $0.319 | $9.57 |
100 | $0.272 | $27.20 |
500 | $0.252 | $126.00 |
1000 | $0.240 | $240.00 |
Inventory:6,168
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Part Number : ZVN2106A
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Package/Case : E-Line
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : ZVN2106A DataSheet (PDF)
The ZVN2106A is a enhancement-mode vertical DMOS FET transistor, designed for use in low power applications such as battery management, power management, and low voltage switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the ZVN2106A FET transistor for a more visual representation. Note: For detailed technical specifications, please refer to the ZVN2106A datasheet. Functionality The ZVN2106A enhancement-mode vertical DMOS FET transistor provides efficient switching and low on-resistance, making it suitable for a wide range of low power applications. Usage Guide Q: Can the ZVN2106A be used in high temperature environments? For similar functionalities, consider these alternatives to the ZVN2106A:Overview of ZVN2106A
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The ZVN2106A has a maximum operating temperature range specified in the datasheet, ensuring reliable operation within certain temperature limits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-92-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 450 mA | Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 700 mW | Channel Mode | Enhancement |
Series | ZVN2106 | Brand | Diodes Incorporated |
Configuration | Single | Forward Transconductance - Min | 300 mS |
Height | 4.01 mm | Length | 4.77 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Factory Pack Quantity | 4000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | FET |
Width | 2.41 mm | Unit Weight | 0.016000 oz |
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