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ZVN3310A

MOSFET N-Chnl 100V

Quantity Unit Price(USD) Ext. Price
1 $0.573 $0.57
10 $0.477 $4.77
30 $0.428 $12.84
100 $0.382 $38.20
500 $0.352 $176.00
1000 $0.339 $339.00

Inventory:4,797

*The price is for reference only.
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Please submit RFQ for ZVN3310A or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of ZVN3310A

MOSFET, N E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):10ohm; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:2A

Key Features

  • 100 Volt VDS
  • RDS(on)= 10Ω
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 500 mA Rds On - Drain-Source Resistance 10 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 625 mW Channel Mode Enhancement
Series ZVN3310 Brand Diodes Incorporated
Configuration Single Fall Time 7 ns
Forward Transconductance - Min 100 mS Height 4.01 mm
Length 4.77 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 7 ns
Factory Pack Quantity 4000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type FET
Typical Turn-Off Delay Time 6 ns Typical Turn-On Delay Time 5 ns
Width 2.41 mm Unit Weight 0.016000 oz

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