IRL2703
Trans MOSFET N-CH Si 30V 24A 3-Pin(3+Tab) TO-220AB Tube
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Part Number : IRL2703
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Package/Case : TO-220AB
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IRL2703 DataSheet (PDF)
Overview of IRL2703
Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Transferred |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | Part Package Code | TO-220AB |
Package Description | TO-220AB, 3 PIN | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | Avalanche Energy Rating (Eas) | 77 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (Abs) (ID) | 24 A |
Drain Current-Max (ID) | 24 A | Drain-source On Resistance-Max | 0.04 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 45 W | Pulsed Drain Current-Max (IDM) | 96 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN LEAD | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Tj max | 175.0 °C |
VDS max | 30.0 V | VGS max | 16.0 V |
Package | TO-220 | Polarity | N |
Ptot max | 45.0 W | Mounting | THT |
RthJC max | 3.3 K/W | RDS (on) max | 60.0 mΩ |
VGS(th) min | 1.0 V | ID max | 24.0 A |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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