IRFR9N20D
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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Part Number : IRFR9N20D
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Package/Case : PAK
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IRFR9N20D DataSheet (PDF)
Overview of IRFR9N20D
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Transferred |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | Part Package Code | TO-252AA |
Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 100 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (Abs) (ID) | 9.4 A | Drain Current-Max (ID) | 9.4 A |
Drain-source On Resistance-Max | 0.38 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e0 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 86 W |
Pulsed Drain Current-Max (IDM) | 38 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Polarity | N |
RthJC max | 1.75 K/W | VDS max | 200.0 V |
Mounting | SMD | Package | DPAK (TO-252) |
Ptot max | 86.0 W | Tj max | 175.0 °C |
VGS max | 30.0 V | RDS (on) max | 380.0 mΩ |
VGS(th) max | 5.5 V | VGS(th) min | 3.0 V |
ID max | 9.4 A |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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