IRF7341
Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.144 | $0.72 |
50 | $0.125 | $6.25 |
150 | $0.117 | $17.55 |
500 | $0.106 | $53.00 |
3000 | $0.101 | $303.00 |
6000 | $0.098 | $588.00 |
Inventory:6,311
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Part Number : IRF7341
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Package/Case : SOIC
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IRF7341 DataSheet (PDF)
Overview of IRF7341
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.• Generation V Technology• Ultra Low On-Resistance• Dual N-Channel Mosfet• Surface Mount• Available in Tape & Reel• Dynamic dv/dt Rating• Fast Switching
Key Features
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEApplication
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Transferred |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | Part Package Code | SOIC |
Package Description | SOP-8 | Pin Count | 8 |
Reach Compliance Code | ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Avalanche Energy Rating (Eas) | 140 mJ |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 55 V |
Drain Current-Max (Abs) (ID) | 4.7 A | Drain Current-Max (ID) | 5.1 A |
Drain-source On Resistance-Max | 0.05 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MS-012AA | JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e0 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2 W | Pulsed Drain Current-Max (IDM) | 42 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | TIN LEAD | Terminal Form | GULL WING |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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