• DMP2160U-7
DMP2160U-7

DMP2160U-7

Diodes Inc DMP2160U-7 P-channel MOSFET Transistor, 3.3 A, -20 V, 3-Pin SOT-23

Quantity Unit Price(USD) Ext. Price
10 $0.072 $0.72
100 $0.060 $6.00
300 $0.054 $16.20
3000 $0.049 $147.00
6000 $0.045 $270.00
9000 $0.044 $396.00

Inventory:8,239

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for DMP2160U-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DMP2160U-7

MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV;

DMP2160U-7

Key Features

  • P-Channel MOSFET
  • Very Low On-Resistance
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Lead Free By Design/RoHS Compliant (Note 2)
  • "Green" Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Application

SWITCHING
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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 76 Weeks Samacsys Manufacturer Diodes Inc.
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 3.2 A Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.08 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.4 W Pulsed Drain Current-Max (IDM) 13 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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