• DMN3067LW-7 SOT323-3
DMN3067LW-7 SOT323-3

DMN3067LW-7

MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC

Quantity Unit Price(USD) Ext. Price
5 $0.146 $0.73
50 $0.119 $5.95
150 $0.107 $16.05
500 $0.092 $46.00
3000 $0.087 $261.00
6000 $0.083 $498.00

Inventory:4,677

*The price is for reference only.
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Please submit RFQ for DMN3067LW-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DMN3067LW-7

MOSFET, N-CH, 30V, 2.6A, SOT323; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

DMN3067LW-7

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.6 A Rds On - Drain-Source Resistance 67 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 4.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Series DMN3067
Brand Diodes Incorporated Configuration Single
Fall Time 6.1 ns Product Type MOSFET
Rise Time 5.2 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 3.8 ns
Unit Weight 0.000212 oz

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