DMP6023LE-13
DMP6023LE-13 MOSFET transistor from Diodes Inc
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.322 | $0.32 |
10 | $0.280 | $2.80 |
30 | $0.262 | $7.86 |
100 | $0.240 | $24.00 |
500 | $0.222 | $111.00 |
1000 | $0.215 | $215.00 |
Inventory:3,995
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Part Number : DMP6023LE-13
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Package/Case : SOT-223-4
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMP6023LE-13 DataSheet (PDF)
The DMP6023LE-13 is a P-channel enhancement mode power MOSFET designed for high-speed switching applications. This MOSFET features a low on-resistance and a small package, making it suitable for compact designs requiring efficient power management. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMP6023LE-13 MOSFET for better understanding. Note: For detailed technical specifications, please refer to the DMP6023LE-13 datasheet. Functionality The DMP6023LE-13 is a P-channel power MOSFET that offers low on-resistance and fast switching speeds, making it ideal for high-speed switching applications. It efficiently manages power in electronic circuits. Usage Guide Q: Is the DMP6023LE-13 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the DMP6023LE-13:Overview of DMP6023LE-13
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the DMP6023LE-13 is designed for high-speed switching applications and is suitable for high-frequency operations.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-223-4 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 18.2 A |
Rds On - Drain-Source Resistance | 28 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 53.1 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 17.3 W | Channel Mode | Enhancement |
Series | DMP60 | Brand | Diodes Incorporated |
Configuration | Single | Fall Time | 62 ns |
Height | 1.6 mm | Length | 6.5 mm |
Product Type | MOSFET | Rise Time | 7.1 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 110 ns |
Typical Turn-On Delay Time | 6 ns | Width | 3.5 mm |
Unit Weight | 0.003951 oz |
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