• DMN5L06DWK-7 SOT363-6
  • DMN5L06DWK-7
DMN5L06DWK-7 SOT363-6
DMN5L06DWK-7

DMN5L06DWK-7

Diodes Inc DMN5L06DWK-7 Dual N-channel MOSFET Transistor, 0.305 A, 50 V, 6-Pin SOT-363

Quantity Unit Price(USD) Ext. Price
5 $0.123 $0.62
50 $0.106 $5.30
150 $0.099 $14.85
500 $0.090 $45.00
3000 $0.087 $261.00
6000 $0.084 $504.00

Inventory:5,064

*The price is for reference only.
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Please submit RFQ for DMN5L06DWK-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DMN5L06DWK-7

The DMN5L06DWK-7 is a power MOSFET transistor designed for high-performance switching applications.This device features a low on-resistance and high current-handling capability,making it ideal for power management and motor control applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • N/C:No Connection
  • N/C:No Connection
  • N/C:No Connection
  • N/C:No Connection
  • N/C:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN5L06DWK-7 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The DMN5L06DWK-7 offers a low on-resistance for efficient power switching.
  • High Current Handling: This MOSFET can handle high currents, making it suitable for power applications.
  • Fast Switching Speed: With its high-performance characteristics, the DMN5L06DWK-7 provides fast switching speeds for responsive control.
  • High Temperature Tolerance: The device is designed to operate reliably at elevated temperatures, ensuring durability in demanding environments.

Note: For detailed technical specifications, please refer to the DMN5L06DWK-7 datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices.
  • Motor Control: Suitable for motor control applications requiring efficient power switching.
  • Switching Circuits: Used in high-performance switching circuits for fast and reliable operation.

Functionality

The DMN5L06DWK-7 MOSFET transistor is designed to efficiently switch high currents in power management and control applications.Its low on-resistance and high current-handling capability make it a reliable choice for demanding electronic systems.

Usage Guide

  • Gate Drive: Apply the appropriate gate voltage to the G (Gate) pin for proper switching operation.
  • Load Connection: Connect the load between the D (Drain) and S (Source) pins of the MOSFET.
  • Heat Dissipation: Ensure proper heat-sinking or thermal management to maintain the device within its operating temperature range.

Frequently Asked Questions

Q: Is the DMN5L06DWK-7 suitable for automotive applications?
A: Yes, the DMN5L06DWK-7's high temperature tolerance makes it suitable for automotive applications where temperature variations are common.

Equivalent

For similar functionalities, consider these alternatives to the DMN5L06DWK-7:

  • NX5L06DWK: Another power MOSFET transistor with comparable performance characteristics.
  • IRF5L06: A MOSFET transistor from International Rectifier offering similar high-current capabilities.

DMN5L06DWK-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 305 mA Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 490 mV
Qg - Gate Charge 400 pC Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 250 mW
Channel Mode Enhancement Series DMN5L06
Brand Diodes Incorporated Configuration Dual
Fall Time 8.4 ns Forward Transconductance - Min 200 mS
Height 1 mm Length 2.2 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 1.8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 14.4 ns Typical Turn-On Delay Time 2.1 ns
Width 1.35 mm Unit Weight 0.000265 oz

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