• DMN2300UFB4-7B X2-DFN1006-3
DMN2300UFB4-7B X2-DFN1006-3

DMN2300UFB4-7B

DMN2300UFB4-7B N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc

Quantity Unit Price(USD) Ext. Price
10 $0.046 $0.46
100 $0.040 $4.00
300 $0.037 $11.10
1000 $0.035 $35.00
5000 $0.033 $165.00
10000 $0.032 $320.00

Inventory:6,654

*The price is for reference only.
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Overview of DMN2300UFB4-7B

The DMN2300UFB4-7B is a N-Channel MOSFET transistor designed for high-speed switching applications.This MOSFET features low on-state resistance and fast switching speeds,making it suitable for power management and motor control applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN2300UFB4-7B for a visual representation.

Key Features

  • High-Speed Switching:The DMN2300UFB4-7B offers fast switching speeds,ideal for applications requiring quick response times.
  • Low On-State Resistance:This MOSFET has low on-state resistance,leading to efficient power management and reduced heat dissipation.
  • High Power Dissipation Capability:With its design,the DMN2300UFB4-7B can handle high power dissipation,suitable for power electronics applications.
  • Enhanced Thermal Performance:The MOSFET is designed for enhanced thermal performance,ensuring reliability under high load conditions.
  • Robust Construction:The DMN2300UFB4-7B is built to withstand high voltage and current levels,providing robust performance in demanding environments.

Note:For detailed technical specifications,please refer to the DMN2300UFB4-7B datasheet.

Application

  • Power Management:Ideal for power management applications in various electronic devices.
  • Motor Control:Suitable for motor control circuits requiring high-speed switching capabilities.
  • Switching Circuits:Used in high-frequency switching circuits for efficient power control.

Functionality

The DMN2300UFB4-7B MOSFET transistor is designed for high-speed switching applications,offering low on-state resistance and fast switching speeds.It provides reliable and efficient power management in various electronic systems.

Usage Guide

  • Gate Control:Apply the appropriate voltage to the Gate pin to control the switching operation of the MOSFET.
  • Drain-Source Connection:Connect the load circuit between the Drain and Source pins of the MOSFET.
  • Thermal Management:Ensure proper heat sinking to manage the heat dissipation during operation.

Frequently Asked Questions

Q:Can the DMN2300UFB4-7B be used in high-temperature environments?
A:Yes,the DMN2300UFB4-7B is designed for enhanced thermal performance and can operate reliably in high-temperature conditions.

Equivalent

For similar functionalities,consider these alternatives to the DMN2300UFB4-7B:

  • DMN2400UFB4-7B:Another N-Channel MOSFET from the same series,offering similar performance with slight variations.
  • DMN2200UFB4-7B:A lower power version of the DMN2300UFB4-7B MOSFET,ideal for applications with lower power requirements.

DMN2300UFB4-7B

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category FETs - Single
Series DMN2300 Packaging Alternate Packaging
Mounting-Style Si Package-Case -55°C ~ 150°C (TJ)
Technology Surface Mount Operating-Temperature Single
Mounting-Type 1 N-Channel Number-of-Channels 20V
Supplier-Device-Package 64.3pF @ 25V Configuration Standard
FET-Type 1.3A (Ta) Power-Max 1.6nC @ 4.5V
Transistor-Type - 55 C VDSS – Drain-Source Voltage 13 ns
Input Capacitance 1.3 A FET-Feature 500 mOhms
Current-Continuous-Drain-Id-25°C 3.5 ns Rds-On-Max-Id-Vgs Enhancement

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